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Characterization Of Gesn Semiconductors For Optoelectronic Devices, Hryhorii Stanchu
Characterization Of Gesn Semiconductors For Optoelectronic Devices, Hryhorii Stanchu
Graduate Theses and Dissertations
Germanium-tin alloys with Sn compositions higher than 8 at. % to 10 at. % have recently attracted significant interest as a group IV semiconductor that is ideal for active photonics on a Si substrate. The interest is due to the fact that while at a few percent of Sn, GeSn is an indirect bandgap semiconductor, at about 8 to 10 at. % Sn, GeSn transitions to a direct bandgap semiconductor. This is at first surprising since the solid solubility of Sn in Ge under equilibrium growth conditions is limited to only about 1 at. %. However, under non-equilibrium growth conditions, …
Si-Based Germanium Tin Photodetectors For Infrared Imaging And High-Speed Detection, Huong Tran
Si-Based Germanium Tin Photodetectors For Infrared Imaging And High-Speed Detection, Huong Tran
Graduate Theses and Dissertations
Infrared (IR) radiation spans the wavelengths of the windows: (1) near-IR region ranging from 0.8 to 1.0 μm, (2) shortwave IR (SWIR) ranging from 1.0 to 3.0 μm, (3) mid-wave IR (MWIR) region covering from 3.0 to 5.0 μm, (4) longwave IR (LWIR) spanning from 8.0 to 12.0 μm, and (5) very longwave IR extending beyond 12.0 μm. The MWIR and LWIR regions are important for night vision in the military, and since the atmosphere does not absorb at these wavelengths, they are also used for free-space communications and astronomy. Automotive and defect detection in the food industry and electronic …