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Full-Text Articles in Electromagnetics and Photonics
Mems Resonant Magnetic Field Sensor Based On An Aln/Fegab Bilayer Nano-Plate Resonator, Yu Hui, Tianxiang Nan, Nian Sun, Matteo Rinaldi
Mems Resonant Magnetic Field Sensor Based On An Aln/Fegab Bilayer Nano-Plate Resonator, Yu Hui, Tianxiang Nan, Nian Sun, Matteo Rinaldi
Tianxiang Nan
This paper reports on the first demonstration of an ultra-miniaturized, high frequency (215 MHz) and high sensitivity MEMS resonant magnetic field sensor based on an AlN/FeGaB bilayer nano-plate resonator capable of detecting magnetic field at nano-Tesla level. Despite of the reduced volume and the high operating frequency of the sensor, high electromechanical performances were achieved (quality factor Q ≈ 511 and electromechanical coupling coefficient kt² ≈ 1.63%). This first prototype was characterized for different magnetic field levels from 0 to 152 Oe showing a frequency sensitivity of ~ 1 Hz/nT and a limit of detection of ~ 10 nT.
Voltage Impulse Induced Bistable Magnetization Switching In Multiferroic Heterostructures, Tianxiang Nan
Voltage Impulse Induced Bistable Magnetization Switching In Multiferroic Heterostructures, Tianxiang Nan
Tianxiang Nan
We report on voltage impulse induced reversible bistable magnetization switching in FeGaB/lead zirconate titanate (PZT) multiferroic heterostructures at room temperature. This was realized through strain-mediated magnetoelectric coupling between ferroelectric PZT and ferromagnetic FeGaB layer. Two reversible and stable voltage-impulse induced mechanical strain states were obtained in the PZT by applying an electric field impulse with its amplitude smaller than the electric coercive field, which led to reversible voltage impulse induced bistable magnetization switching. These voltage impulse induced bistable magnetization switching in multiferroic heterostructures provides a promising approach to power efficient bistable magnetization switching that is crucial for information storage.