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Full-Text Articles in Electromagnetics and Photonics
Temporally Multiplexed Ladar Polarimeter, Christian Keyser, Richard Kenneth Martin
Temporally Multiplexed Ladar Polarimeter, Christian Keyser, Richard Kenneth Martin
AFIT Patents
In a polarimeter, a polarization modulator changes a polarization phase of an output optical pulse with a modulation function that varies in time over the duration of the optical pulse. A static polarization state analyzer, which includes a one or more static polarization component analyzers and detectors, receives the modulated optical pulse after interaction with a target medium and provides time varying intensities of the polarization components of the received pulse. A signal processing module determines a polarization property of the target medium, such as a Mueller matrix, dependent upon time varied intensities over the duration of the received optical …
Beyond Conventional C-Plane Gan-Based Light Emitting Diodes: A Systematic Exploration Of Leds On Semi-Polar Orientations, Morteza Monavarian
Beyond Conventional C-Plane Gan-Based Light Emitting Diodes: A Systematic Exploration Of Leds On Semi-Polar Orientations, Morteza Monavarian
Theses and Dissertations
Despite enormous efforts and investments, the efficiency of InGaN-based green and yellow-green light emitters remains relatively low, and that limits progress in developing full color display, laser diodes, and bright light sources for general lighting. The low efficiency of light emitting devices in the green-to-yellow spectral range, also known as the “Green Gap”, is considered a global concern in the LED industry. The polar c-plane orientation of GaN, which is the mainstay in the LED industry, suffers from polarization-induced separation of electrons and hole wavefunctions (also known as the “quantum confined Stark effect”) and low indium incorporation efficiency that …
The Effect Of Polarization And Ingan Quantum Well Shape In Multiple Quantum Well Light Emitting Diode Heterostructures, Patrick M. Mcbride
The Effect Of Polarization And Ingan Quantum Well Shape In Multiple Quantum Well Light Emitting Diode Heterostructures, Patrick M. Mcbride
Master's Theses
Previous research in InGaN/GaN light emitting diodes (LEDs) employing semi-classical drift-diffusion models has used reduced polarization constants without much physical explanantion. This paper investigates possible physical explanations for this effective polarization reduction in InGaN LEDs through the use of the simulation software SiLENSe. One major problem of current LED simulations is the assumption of perfectly discrete transitions between the quantum well (QW) and blocking layers when experiments have shown this to not be the case. The In concentration profile within InGaN multiple quantum well (MQW) devices shows much smoother and delayed transitions indicative of indium diffusion and drift during …