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Electromagnetics and Photonics Commons

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Materials Science and Engineering

1993

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Electrical Properties Of P-Type Gainp2, Roy S. Calfas Dec 1993

Electrical Properties Of P-Type Gainp2, Roy S. Calfas

Theses and Dissertations

The GaInP2 n+—p junction diode has recently become important to the development of high efficiency GaInP2GaAs dual junction solar cells, which have a demonstrated air mass 1.5 conversion efficiencies in excess of 27. In order to study the effects of long term exposure to the space environment, the GaInP2 n+—p junction diodes were irradiated with a 1 MeV electron beam with a fluence of 1016 electrons/cm2. Since little is known about deep level defects traps in GaInP2, a deep level transient spectroscopy DLTS study was made to characterize the …