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Full-Text Articles in Electromagnetics and Photonics
Growth Of Indium Nitride Quantum Dots By Molecular Beam Epitaxy, Steven P. Minor
Growth Of Indium Nitride Quantum Dots By Molecular Beam Epitaxy, Steven P. Minor
Graduate Theses and Dissertations
Over the last decade, the evolution of the global consciousness in response to decreasing environmental conditions from global warming and pollution has led to an outcry for finding new alternative/clean methods for harvesting energy and determining ways to minimize energy consumption. III-nitride materials are of interest for optoelectronic and electronic device applications such as high efficiency solar cells, solid state lighting (LEDs), and blue laser (Blu-ray Technology) applications. The wide range of direct band gaps covered by its alloys (0.7eV-6.2eV) best illustrates the versatility of III-nitride materials. This wide range has enabled applications extending from the ultraviolet to the near …
Investigation Of Critical Technologies Of Chemical Vapor Deposition For Advanced (Si)Gesn Materials, Joshua Matthew Grant
Investigation Of Critical Technologies Of Chemical Vapor Deposition For Advanced (Si)Gesn Materials, Joshua Matthew Grant
Graduate Theses and Dissertations
The development of new materials for efficient optoelectronic devices from Group IV elements is the heart of Group IV photonics. This has direct ties to modern technology as the foundation for the electronics industry is silicon. This has driven the development of silicon-based optoelectronics using these other Group IV materials as silicon is a poor optical material due to its indirect band gap when compared to the III-V semiconductors that are used by most of the optoelectronics industry. While efforts have been made to integrate III-V materials onto silicon substrates, the incompatibility with the complementary metal oxide semiconductor process has …