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Full-Text Articles in Electromagnetics and Photonics

Interfacial Contact With Noble Metal - Noble Metal And Noble Metal - 2d Semiconductor Nanostructures Enhance Optical Activity, Ricardo Raphael Lopez Romo Dec 2019

Interfacial Contact With Noble Metal - Noble Metal And Noble Metal - 2d Semiconductor Nanostructures Enhance Optical Activity, Ricardo Raphael Lopez Romo

Graduate Theses and Dissertations

Noble metal nanoparticles and two-dimensional (2D) transition metal dichalcogenide (TMD) crystals offer unique optical and electronic properties that include strong exciton binding, spin-orbital coupling, and localized surface plasmon resonance. Controlling these properties at high spatiotemporal resolution can support emerging optoelectronic coupling and enhanced optical features. Excitation dynamics of these optical properties on physicochemically bonded mono- and few-layer TMD crystals with metal nanocrystals and two overlapping spherical metal nanocrystals were examined by concurrently (i) DDA simulations and (ii) far-field optical transmission UV-vis spectroscopic measurements. Initially, a novel and scalable method to unsettle van der Waals bonds in bulk TMDs to prepare …


Targeted Germanium Ion Irradiation Of Aluminum Gallium Nitride/Gallium Nitride High Electron Mobility Transistors, Melanie E. Mace Aug 2019

Targeted Germanium Ion Irradiation Of Aluminum Gallium Nitride/Gallium Nitride High Electron Mobility Transistors, Melanie E. Mace

Theses and Dissertations

Microscale beams of germanium ions were used to target different locations of aluminum galliumnitride/gallium nitride (AlGaN/GaN) high electron mobility transistors (HEMTs) to determine location dependent radiation effects. 1.7 MeV Ge ions were targeted at the gap between the gate and the drain to observe displacement damage effects while 47 MeV Ge ions were targeted at the gate to observe ionization damage effects. Electrical data was taken pre, during, and post irradiation. To separate transient from permanent degradation, the devices were characterized after a room temperature anneal for at least 30 days. Optical images were also analyzed pre and post irradiation. …


Optical Response Analysis Of Thz Photoconductive Antenna Using Comsol Multiphysics, Jose Isaac Santos Batista May 2019

Optical Response Analysis Of Thz Photoconductive Antenna Using Comsol Multiphysics, Jose Isaac Santos Batista

Electrical Engineering Undergraduate Honors Theses

A THz photoconductive antenna consists of antenna pads laid over a photoconductive substrate. These types of antennas are excited through the application of an optical pump (laser), which generates carriers inside the semiconductor. The acceleration and recombination of these carriers produce photocurrent that excites the antenna and generates THz pulse. This thesis focuses on analyzing the optical response of a photoconductive antenna, which consist of the interaction of the incident electric field of a laser pump with the radiating device. It develops the amplitude modulation process of a plane wave of light into a laser pump. It also takes into …


Characterization Of Hydride Vapor Phase Epitaxy Grown Gan Substrates For Future Iii-Nitride Growth, Alaa Ahmad Kawagy May 2019

Characterization Of Hydride Vapor Phase Epitaxy Grown Gan Substrates For Future Iii-Nitride Growth, Alaa Ahmad Kawagy

Graduate Theses and Dissertations

The aim of this research is to investigate and characterize the quality of commercially obtained gallium nitride (GaN) on sapphire substrates that have been grown using hydride vapor phase epitaxy (HVPE). GaN substrates are the best choice for optoelectronic applications because of their physical and electrical properties. Even though HVPE GaN substrates are available at low-cost and create the opportunities for growth and production, these substrates suffer from large macro-scale defects on the surface of the substrate.

In this research, four GaN on sapphire substrates were investigated in order to characterize the surface defects and, subsequently, understand their influence on …


M2 Factor Of A Vector Schell-Model Beam, Milo W. Hyde Iv, Mark F. Spencer Jan 2019

M2 Factor Of A Vector Schell-Model Beam, Milo W. Hyde Iv, Mark F. Spencer

Faculty Publications

Extending existing scalar Schell-model source work, we derive the M2 factor for a general electromagnetic or vector Schell-model source to assess beam quality. In particular, we compute the M2 factors for two vector Schell-model sources found in the literature. We then describe how to synthesize vector Schell-model beams in terms of specified, desired M2 and present Monte Carlo simulation results to validate our analysis.