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Electromagnetics and Photonics Commons™
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Articles 1 - 9 of 9
Full-Text Articles in Electromagnetics and Photonics
Skin Effect Suppression In Infrared-Laser Irradiated Planar Multi-Walled Carbon Nanotube/ Cu Conductors, Kamran Keramatnejad, Yang Gao, Yunshen Zhou, Hossein Rabiee Glogir, Mengmeng Wang, Yongfeng Lu
Skin Effect Suppression In Infrared-Laser Irradiated Planar Multi-Walled Carbon Nanotube/ Cu Conductors, Kamran Keramatnejad, Yang Gao, Yunshen Zhou, Hossein Rabiee Glogir, Mengmeng Wang, Yongfeng Lu
Department of Electrical and Computer Engineering: Dissertations, Theses, and Student Research
Skin effect suppression in planar multi-walled carbon nanotube (MWCNT)/Copper (Cu) conductors was realized at the 0-10 MHz frequency range through infrared laser irradiation of MWCNTs, which were coated on the surface of the Cu substrate via the electrophoretic deposition (EPD) method. The effect of laser irradiation and its power density on electrical and structural properties of the MWCNT/Cu conductors was investigated using a wavelength-tunable CO2 laser and then comparing the performance of the samples prepared at different conditions with that of pristine Cu. The irradiation at λ=9.219 μm proved to be effective in selective delivery of energy towards depths close …
Characterization Of Two Vernier-Tuned Distributed Bragg Reflector (Vt-Dbr) Lasers Used In Swept Source Optical Coherence Tomography (Ss-Oct), Greg M. Bergdoll
Characterization Of Two Vernier-Tuned Distributed Bragg Reflector (Vt-Dbr) Lasers Used In Swept Source Optical Coherence Tomography (Ss-Oct), Greg M. Bergdoll
Master's Theses
Insight Photonic Solutions Inc. has continued to develop their patented VT-DBR laser design; these wavelength tunable lasers promise marked image-quality and acquisition time improvements in SS-OCT applications.
To be well suited for SS-OCT, tunable lasers must be capable of producing a highly linear wavelength sweep across a tuning range well-matched to the medium being imaged; many different tunable lasers used in SS-OCT are compared to identify the optimal solution.
This work electrically and spectrally characterizes two completely new all-semiconductor VT-DBR designs to compare, as well. The Neptune VT-DBR, an O-band laser, operates around the 1310 nm range and is a …
Single-Walled Carbon Nanotube Arrays For High Frequency Applications, Asmaa Elkadi
Single-Walled Carbon Nanotube Arrays For High Frequency Applications, Asmaa Elkadi
Graduate Theses and Dissertations
This dissertation presents a thorough analysis of semiconducting Single-Walled Carbon Nanotube-based devices, followed by a test structure fabrication and measurements.
The analysis starts by developing an individual nanotube model, which is then generalized for many nanotubes and adding the parasitic elements. The parasitic elements appear when forming the device electrodes degrade the overall performance.
The continuum model of an individual nanotube is developed. A unique potential function is presented to effectively describe the electron distribution in the carbon nanotube subsequently facilitating solving Schrödinger's equation to obtain the energy levels, and to generalize the model for many nanotubes.
It is shown …
Characterization Of Silicon Phosphorus Alloy For Device Applications, Larry C. Cousar
Characterization Of Silicon Phosphorus Alloy For Device Applications, Larry C. Cousar
Graduate Theses and Dissertations
A new material of highly-phosphorus doped silicon for device applications was characterized and analyzed for new material properties. Devices such as NMOS transistors and other CMOS compatible devices may benefit from new materials that reduce external resistances and increase drive currents.
Material characterization requires numerous techniques and technologies to determine electrical, optical, and physical characteristics. For this work, Hall measurement, X-ray Diffraction, Raman Spectroscopy, Photoluminescence Characterization, and Spectroscopic Ellipsometry were used to better understand this new material. The results may lead to new models for silicon phosphorus alloys.
Highly Sensitive X-Ray Detectors In The Low-Energy Range On N-Type 4h-Sic Epitaxial Layers, K. C. Mandal, P. G. Muzykov, J. R. Terry
Highly Sensitive X-Ray Detectors In The Low-Energy Range On N-Type 4h-Sic Epitaxial Layers, K. C. Mandal, P. G. Muzykov, J. R. Terry
Krishna C. Mandal
No abstract provided.
A Semi-Empirical Model For Tilted-Gun Planar Magnetron Sputtering Accounting For Chimney Shadowing, Johnathan Bunn, C. Metting, Jason Hattrick-Simpers
A Semi-Empirical Model For Tilted-Gun Planar Magnetron Sputtering Accounting For Chimney Shadowing, Johnathan Bunn, C. Metting, Jason Hattrick-Simpers
Jason R. Hattrick-Simpers
No abstract provided.
Development Of Infrared And Terahertz Bolometers Based On Palladium And Carbon Nanotubes Using Roll To Roll Process, Amulya Gullapalli
Development Of Infrared And Terahertz Bolometers Based On Palladium And Carbon Nanotubes Using Roll To Roll Process, Amulya Gullapalli
Masters Theses
Terahertz region in the electromagnetic spectrum is the region between Infrared and Microwave. As the Terahertz region has both wave and particle nature, it is difficult to make a room temperature, fast, and sensitive detector in this region. In this work, we fabricated a Palladium based IR detector and a CNT based THz bolometer.
In Chapter 1, I give a brief introduction of the Terahertz region, the detectors already available in the market and different techniques I can use to test my detector. In Chapter 2, I explain about the Palladium IR bolometer, the fabrication technique I have used, and …
Very-Low-Specific-Resistance Pd/Ag/Au/Ti/Au Alloyed Ohmic Contact To P Gan For High-Current Devices, V. Adivarahan, A. Lunev, M. Asif Khan, J. Yang, Grigory Simin, M. S. Shur, R. Gaska
Very-Low-Specific-Resistance Pd/Ag/Au/Ti/Au Alloyed Ohmic Contact To P Gan For High-Current Devices, V. Adivarahan, A. Lunev, M. Asif Khan, J. Yang, Grigory Simin, M. S. Shur, R. Gaska
Grigory Simin
We report on Pd/Ag/Au/Ti/Au alloyed metallic contact to pGaN. An 800 °C anneal for 1 min in flowing nitrogen ambient produces an excellent ohmic contact with a specific contact resistivity close to 1×10−6 Ω cm2 and with good stability under high current operation conditions. This high-temperature anneal forms an alloy between Ag,Au, and pGaN resulting in a highly p-doped region at the interface. Using x-ray photoelectron spectroscopy and x-ray diffractionanalysis, we confirm that the contact formation mechanism is the metal intermixing and alloying with the semiconductor.
Low Clutter Method For Bistatic Rcs Measurements, Peter J. Collins
Low Clutter Method For Bistatic Rcs Measurements, Peter J. Collins
AFIT Patents
A bistatic radar measurement system is provided having a radar source configured to produce a radio frequency signal. A transmitting antenna is configured to transmit the radio frequency signal toward a target. A receiving antenna is configured to receive a reflected radio frequency signal from the target. A support system is configured to support the receiving antenna. The support system includes a plurality of low scattering dielectric strings configured to orient the receiving antenna.