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Full-Text Articles in Electrical and Electronics
Efficient Modeling Techniques For Time-Dependent Quantum System With Applications To Carbon Nanotubes, Zuojing Chen
Efficient Modeling Techniques For Time-Dependent Quantum System With Applications To Carbon Nanotubes, Zuojing Chen
Masters Theses 1911 - February 2014
The famous Moore's law states: Since the invention of the integrated circuit, the number of transistors that can be placed on an integrated circuit has increased exponentially, doubling approximately every two years. As a result of the downscaling of the size of the transistor, quantum effects have become increasingly important while affecting significantly the device performances. Nowadays, at the nanometer scale, inter-atomic interactions and quantum mechanical properties need to be studied extensively. Device and material simulations are important to achieve these goals because they are flexible and less expensive than experiments. They are also important for designing and characterizing new …
Piezoelectric Doping In Alingan/Gan Heterostructures, M. Asif Khan, J. W. Yang, Grigory Simin, R. Gaska, M. S. Shur, A. D. Bykovski
Piezoelectric Doping In Alingan/Gan Heterostructures, M. Asif Khan, J. W. Yang, Grigory Simin, R. Gaska, M. S. Shur, A. D. Bykovski
Faculty Publications
We report on the piezoelectricdoping and two-dimensional (2D) electron mobility in AlInGaN/GaN heterostructures grown on 6H–SiC substrates. The contribution of piezoelectricdoping to the sheet electron density was determined using an In-controlled built-in strain-modulation technique. Our results demonstrate that in strained AlGaN/GaN heterostructures, the piezoelectric field generates at least 50% of the 2D electrons. The strain modulation changes the potential distribution at the heterointerface, which, in turn, strongly affects the 2D electron mobility, especially at cryogenic temperatures. The obtained results demonstrate the potential of strain engineering and piezoelectricdoping for GaN-based electronics.