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Full-Text Articles in Electrical and Electronics
The Effect Zeolite Addition In Natural Rubber Polypropylene Composite On Mechanical, Structure, And Thermal Characteristics, Nurdin Bukit, Erna Frida
The Effect Zeolite Addition In Natural Rubber Polypropylene Composite On Mechanical, Structure, And Thermal Characteristics, Nurdin Bukit, Erna Frida
Makara Journal of Technology
This study was conducted to determine the effect of zeolite as filler on mechanical properties, and thermal structure blends of natural rubber and polypropylene (NR/PP). In this study, NR/PP/PP-g-MA blends was filled uncalcined zeolite and calcined zeolite at different weight percent of the 2, 4, and 6%. Samples were characterized to determine the tensile strength, fracture elongation and Young's modulus. Structure of the samples was investigated using XRD method and thermal characteristics were analyzed using DTA/TGA technique. The results obtained for tensile strength showed a significant influence with the addition zeolite of the NR/PP blends at 2% by weight of …
Structural, Optical And Electrical Properties Of Yttrium-Doped Hafnium Oxide Nanocrystalline Thin Films, Abhilash Kongu
Structural, Optical And Electrical Properties Of Yttrium-Doped Hafnium Oxide Nanocrystalline Thin Films, Abhilash Kongu
Open Access Theses & Dissertations
Hafnium oxide (HfO2) has emerged as the most promising high-k dielectric for Metal-Oxide-Semiconductor (MOS) devices and has been highlighted as the most suitable dielectric materials to replace silicon oxide because of its comprehensive performance. In the present research, yttrium-doped HfO2 (YDH) thin films were fabricated using RF magnetron sputter deposition onto Si (100) and quartz with a variable thickness. Cross-sectional scanning electron microscopy coupled with Filmetrics revealed that film thickness values range from 700 A° to 7500 A°. Electrical properties such as AC Resistivity and current-voltage (I-V) characteristics of YDH films were studied. YDH films that were relatively thin (<1500 A°) crystallized in monoclinic phase while thicker films crystallized in cubic phase. The band gap (Eg) of the films was calculated from the optical measurements. The band gap was found to be ∼5.60 eV for monoclinic while it is ∼6.05 eV for cubic phase of YDH films. Frequency dependence of the electrical resistivity (ρac) and the total conductivity of the films were measured. Resistivity decreased (by three orders of magnitude) with increasing frequency from 100 Hz to 1 MHz, attributed due to the hopping mechanism in YDH films. Whereas, while ρac∼1Ω-m at low frequencies (100 Hz), it decreased to ∼ 104 Ω-cm at higher frequencies (1 MHz). Aluminum (Al) metal electrodes were deposited to fabricate a thin film capacitor with YDH layer as dielectric film thereby employing Al-YDH-Si capacitor structure. The results indicate that the capacitance of the films decrease with increasing film thickness. A detailed analysis of the electrical characteristics of YDH films is presented.