Electrical and Electronics Commons^™

Electrical Switching Studies Of Chalcogenide-Based Ion-Conducting Variable Resistance Devices, Beth Rose Cook

Boise State University Theses and Dissertations

In this work, ion-conducting devices using layers of chalcogenide materials are explored as potential non-volatile memory devices. This technology is also known in the literature as conductively bridged RAM (CBRAM), programmable metallization cell (PMC), and programmable conductor RAM (PCRAM; not to be confused with the acronym PCRAM as used to denote phase-change memory).

Electrical measurements with five different programming currents at four temperatures have been performed on two-terminal devices comprised of silver with a metal-selenide and germanium-chalcogenide layer. The metal-selenide layer is Sb₂Se₃, SnSe, PbSe, In₂Se₃, or Ag₂Se. The germanium-chalcogenide …