Electrical and Electronics Commons^™

Deconvolution Of Chirp Sidescan Sonar Data, Juliette W. Ioup, Maria T. Kalcic, Dale Bibee, Edit J. Kaminsky, George E. Ioup

Electrical Engineering Faculty Publications

No abstract provided.

Induced Strain Mechanism Of Current Collapse In Algan/Gan Heterostructure Field-Effect Transistors, Grigory Simin, A. Koudymov, A. Tarakji, X. Hu, J. Yang, M. Asif Khan, M. S. Shur, R. Gaska

Faculty Publications

Gated transmission line model pattern measurements of the transient current–voltage characteristics of AlGaN/GaN heterostructurefield-effect transistors(HFETs) and metal–oxide–semiconductor HFETs were made to develop a phenomenological model for current collapse. Our measurements show that, under pulsed gate bias, the current collapse results from increased source–gate and gate–drain resistances but not from the channel resistance under the gate. We propose a model linking this increase in series resistances (and, therefore, the current collapse) to a decrease in piezoelectriccharge resulting from the gate bias-induced nonuniform strain in the AlGaN barrier layer.

Predictive Performance Modeling And Simulation, Garth Crosby

FIU Electronic Theses and Dissertations

The purpose of this thesis was to create and simulate a model of an existing Campus network with a view to predict future performance. This thesis also suggests ways in which such a network can be optimized.

Such simulation and modeling can be referred to as "Predictive Performance Modeling'. In this research a model of Florida International University (University Park campus) High Speed Network was created. Simulation of the model was carried out and an ATM Backbone Analysis was done. The results obtained were compared with corresponding results obtained by network performance monitoring and measurement software tools. A strong correlation …

Low Frequency Noise In Gan Metal Semiconductor And Metal Oxide Semiconductor Field Effect Transistors, S. L. Rumyantsev, N. Pala, M. S. Shur, R. Gaska, M. E. Levinshtein, M. Asif Khan, Grigory Simin, X. Hu, J. Yang

Faculty Publications

The low frequency noise in GaNfield effect transistors has been studied as function of drain and gate biases. The noise dependence on the gate bias points out to the bulk origin of the low frequency noise. The Hooge parameter is found to be around 2×10⁻³ to 3×10⁻³.Temperature dependence of the noise reveals a weak contribution of generation–recombination noise at elevated temperatures.

Feedback Correction Of Angular Error In Grating Readout, Monish Ranjan Chatterjee, Sundaram Ramachandran

Electrical and Computer Engineering Faculty Publications

Angular and wavelength READ beam errors in holographic interconnection systems are often a recurrent problem. Several strategies have been proposed to minimize or eliminate such READOUT misalignments.

Some years ago, Chatterjee and co-workers proposed a method involving READ beam wavelength tuning to correct output angular errors. In this paper, we investigate the possibility of using an acousto-optic (A-O) Bragg cell with optoelectronic feedback to dynamically correct the scattered beam for deviations in the incidence direction of the READ beam of a hologram. The concept here is based on an acoustic frequency feedback strategy used recently by Balakshy and Kazaryan for …

Apparatus And Method For Two Stage Hybrid Space-Time Adaptive Processing In Radar And Communication Systems, Todd B. Hale, Michael C. Wicks, Raviraj S. Adve

AFIT Patents

A Two-Stage Hybrid algorithm offers significant improvement in the false alarm rate and detection performance of Space-Time Adaptive Processing in non-homogeneous environments for both radar and digital communications. The first stage analyzes data from a range cell of interest by direct data domain processing, suppressing discrete interferers within the range cell of interest. The second stage implements a purely statistical STAP algorithm, preferably an enhanced version of the Joint-Domain Localized ("JDL") statistical algorithm. For radar this second stage estimates the interference within the range cell of interest from the surrounding range cells. For a communications system, the second stage estimates …

Human Head-Neck Response To Impact Acceleration: Comparison Of Oblique To Combined Frontal And Lateral Response, Salvadore J. Guccione Jr., Edit J. Kaminsky

Electrical Engineering Faculty Publications

This paper relates human oblique head-neck kinematics to human frontal and lateral head-neck kinematics for three subjects of varying anthropometry. Head-neck kinematic response to indirect impact acceleration for an oblique test is compared to the superposition of the head/neck behavior of appropriate frontal and lateral tests for the same subject. The results have important implications in terms of the complexity required in the design and validation of omni-directional biofidelic crash test manikins and mathematical models of human head-neck response.

Overview Of Acousto-Optic Bistability, Chaos, And Logical Applications, Monish Ranjan Chatterjee, Erol Sonmez

Electrical and Computer Engineering Faculty Publications

An overview is presented of the key results in the field of acousto-optic bistability in the past two decades. It is shown that the basic acousto-optic bistable device may be described as a nonlinear dynamical system which satisfies a quadratic map. Thereafter, details are presented of several analytical methods, computer modeling approaches, including the SPICE circuit modeling technique, and experiments that have been used to understand the phenomenon.

Extensions to logical and digital applications are also discussed.

Tilted Bilayer Membranes As Simple Transmission Quarter-Wave Retardation Plates, R. M.A. Azzam, Fadi A. Mahmoud

Electrical Engineering Faculty Publications

A tilted bilayer membrane, which consists of two thin films of transparent optically isotropic materials of different refractive indices, can function as a transmission quarter-wave retarder (QWR) at a high angle of incidence. A specific design using a cryolite-Si membrane in the infrared is presented, and its tolerances to small shifts of wavelength, incidence angle, and film thickness errors are discussed. Some designs provide a dual QWR in transmission and reflection. Such devices provide simple linear-to-circular (and circular-to-linear) polarization transformers. Bilayer eighth-wave retarders without diattenuation are also introduced.

Study Of Dynamics And Mechanism Of Metal-Induced Silicon Growth, Elena A. Guliants, Wayne A. Anderson

Electrical and Computer Engineering Faculty Publications

The present study addresses the mechanism of metal-induced growth of device-quality silicon thin films. Si deposition was performed by magnetron sputtering on a 25-nm-thick Ni prelayer at 525–625 °C and yielded a continuous, highly crystalline film with a columnar structure. A Ni disilicide intermediate layer formed as a result of the Ni reaction with Si deposit provides a sufficient site for the Si epitaxial growth because lattice mismatch is small between the two materials. The reaction between Ni and Si was observed to progress in several stages. The NixSiy phase evolution in a Ni:Si layer was studied by x-ray photoelectron …