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Transport Properties Of Nc-Si / A-Sio2 Superlattices And Their Applications In Non-Volatile Memory, Lakshmi Susmitha Koneru

Theses

The dc current-voltage characteristics, ac conductivity, equivalent capacitance, photocurrent transients of the n-Si/nanocrystalline-Si/amorphous-SiO₂/Al heterostructure were measured in a wide range of illumination intensities for temperatures from 4.2 K to 300 K. Electrical transport properties of the nanocrystalline-Si/amorphous-SiO₂ superlattices were discussed. The observed domination of the electron component at negative bias and of the hole component at positive bias above 0.7 V in a dc current allows to separate transport features of electrons and holes in a nc-Si/a-SiO₂ superlattices. Transport of electrons is thermally activated if potential barrier at c-Si/SL interface of 70 meV is suppressed and …