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Full-Text Articles in Electrical and Electronics
Analysis Of Strain And Intermixing In Single-Layer Ge/Si Quantum Dots Using Polarized Raman Spectroscopy, Anna Baranov, A. V. Federov, Tatiana Perova, R. A. Moore, V. Yam, D. Bouchier, V. Le Thanh, Kevin Berwick
Analysis Of Strain And Intermixing In Single-Layer Ge/Si Quantum Dots Using Polarized Raman Spectroscopy, Anna Baranov, A. V. Federov, Tatiana Perova, R. A. Moore, V. Yam, D. Bouchier, V. Le Thanh, Kevin Berwick
Articles
The built-in strain and composition of as-grown and Si-capped single layers of Ge∕Si dots grown at various temperatures (460–800 °C) are studied by a comparative analysis of the Ge-Ge and Si-Ge modes in the polarized Raman spectra of the dots. A pronounced reduction of the strain and Ge content in the dots after deposition of the cap layer at low temperatures is observed, indicating that strain-induced Si diffusion from the cap layer is occurring. For large dots grown at 700–800 °C the observations are in agreement with a model of the Ge∕Si dot consisting of a Si-rich boundary region and …
Design Of One-Dimensional Composite Photonic Crystals With An Extended Photonic Band Gap, Vladimir Tolmachev, Kevin Berwick
Design Of One-Dimensional Composite Photonic Crystals With An Extended Photonic Band Gap, Vladimir Tolmachev, Kevin Berwick
Articles
A technique for photonic band gap (PBG) extension based on mixing photonic crystals with different lattice constants or filling factors is suggested. For the design of photonic crystals with maximal PBG extension the gap map imposition method is utilized. Gap maps for composite photonic crystals based on Si-air structures are calculated and used to predict optimal structures for fabrication.