Electrical and Electronics Commons^™

Study Of Mosfet Degradation Under Substrate Injection And Hot Carrier Degradation, Bhawar S. Patel

Theses

With continued scaling of MOSFET's, the reliability of thin gate oxides is becoming increasingly important. Degradation issues due to fabrication technology may result in misinterpretation unless the actual physical situation arising at source, drain, gate and substrate of a transistor during processing is understood. This degradation is prominent in plasma processing due to wafer charging which occurs due to the reactive ions in the plasma. The voltages developed at source and drain junctions, depending upon polarity relative to the substrate cause the source and drain junctions to be forward biased or reverse biased. Keeping in view this type of physical …