Electrical and Electronics Commons^™

Induced Strain Mechanism Of Current Collapse In Algan/Gan Heterostructure Field-Effect Transistors, Grigory Simin, A. Koudymov, A. Tarakji, X. Hu, J. Yang, M. Asif Khan, M. S. Shur, R. Gaska

Faculty Publications

Gated transmission line model pattern measurements of the transient current–voltage characteristics of AlGaN/GaN heterostructurefield-effect transistors(HFETs) and metal–oxide–semiconductor HFETs were made to develop a phenomenological model for current collapse. Our measurements show that, under pulsed gate bias, the current collapse results from increased source–gate and gate–drain resistances but not from the channel resistance under the gate. We propose a model linking this increase in series resistances (and, therefore, the current collapse) to a decrease in piezoelectriccharge resulting from the gate bias-induced nonuniform strain in the AlGaN barrier layer.

Low Frequency Noise In Gan Metal Semiconductor And Metal Oxide Semiconductor Field Effect Transistors, S. L. Rumyantsev, N. Pala, M. S. Shur, R. Gaska, M. E. Levinshtein, M. Asif Khan, Grigory Simin, X. Hu, J. Yang

Faculty Publications

The low frequency noise in GaNfield effect transistors has been studied as function of drain and gate biases. The noise dependence on the gate bias points out to the bulk origin of the low frequency noise. The Hooge parameter is found to be around 2×10⁻³ to 3×10⁻³.Temperature dependence of the noise reveals a weak contribution of generation–recombination noise at elevated temperatures.

Feedback Correction Of Angular Error In Grating Readout, Monish Ranjan Chatterjee, Sundaram Ramachandran

Electrical and Computer Engineering Faculty Publications

Angular and wavelength READ beam errors in holographic interconnection systems are often a recurrent problem. Several strategies have been proposed to minimize or eliminate such READOUT misalignments.

Some years ago, Chatterjee and co-workers proposed a method involving READ beam wavelength tuning to correct output angular errors. In this paper, we investigate the possibility of using an acousto-optic (A-O) Bragg cell with optoelectronic feedback to dynamically correct the scattered beam for deviations in the incidence direction of the READ beam of a hologram. The concept here is based on an acoustic frequency feedback strategy used recently by Balakshy and Kazaryan for …

Overview Of Acousto-Optic Bistability, Chaos, And Logical Applications, Monish Ranjan Chatterjee, Erol Sonmez

Electrical and Computer Engineering Faculty Publications

An overview is presented of the key results in the field of acousto-optic bistability in the past two decades. It is shown that the basic acousto-optic bistable device may be described as a nonlinear dynamical system which satisfies a quadratic map. Thereafter, details are presented of several analytical methods, computer modeling approaches, including the SPICE circuit modeling technique, and experiments that have been used to understand the phenomenon.

Extensions to logical and digital applications are also discussed.

Study Of Dynamics And Mechanism Of Metal-Induced Silicon Growth, Elena A. Guliants, Wayne A. Anderson

Electrical and Computer Engineering Faculty Publications

The present study addresses the mechanism of metal-induced growth of device-quality silicon thin films. Si deposition was performed by magnetron sputtering on a 25-nm-thick Ni prelayer at 525–625 °C and yielded a continuous, highly crystalline film with a columnar structure. A Ni disilicide intermediate layer formed as a result of the Ni reaction with Si deposit provides a sufficient site for the Si epitaxial growth because lattice mismatch is small between the two materials. The reaction between Ni and Si was observed to progress in several stages. The NixSiy phase evolution in a Ni:Si layer was studied by x-ray photoelectron …