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Full-Text Articles in Electrical and Electronics

Study Of Thin Gan/Ingan/Gan Double Graded Structures For Future Photovoltaic Application, Mirsaeid Sarollahi Aug 2022

Study Of Thin Gan/Ingan/Gan Double Graded Structures For Future Photovoltaic Application, Mirsaeid Sarollahi

Graduate Theses and Dissertations

Indium gallium nitride (In_x Ga_(1-x) N) materials have displayed great potential for photovoltaic and optoelectronic devices due to their optical and electrical properties. Properties such as direct bandgap, strong bandgap absorption, thermal stability and high radiation resistance qualify them as great materials for photovoltaic devices. The tunable bandgap which absorbs the whole solar spectrum is the most significant feature which became attractive for scientists. The bandgap for these materials varies from 0.7 eV for InN to 3.4 eV for GaN covering from infrared to ultraviolet. In_x Ga_(1-x) N wurtzite crystal is grown on GaN buffer layer by Molecular Beam Epitaxy …


Distributed Modeling Approach For Electrical And Thermal Analysis Of High-Frequency Transistors, Amirreza Ghadimi Avval Jul 2021

Distributed Modeling Approach For Electrical And Thermal Analysis Of High-Frequency Transistors, Amirreza Ghadimi Avval

Graduate Theses and Dissertations

The research conducted in this dissertation is focused on developing modeling approaches for analyzing high-frequency transistors and present solutions for optimizing the device output power and gain. First, a literature review of different transistor types utilized in high-frequency regions is conducted and gallium nitride high electron mobility transistor is identified as the promising device for these bands. Different structural configurations and operating modes of these transistors are explained, and their applications are discussed. Equivalent circuit models and physics-based models are also introduced and their limitations for analyzing the small-signal and large-signal behavior of these devices are explained. Next, a model …


Design, Fabrication, And Reliability Effects Of Additively Manufactured First Level Compliant Interconnects For Microelectronics Application, Tumininu David Olatunji Dec 2020

Design, Fabrication, And Reliability Effects Of Additively Manufactured First Level Compliant Interconnects For Microelectronics Application, Tumininu David Olatunji

Graduate Theses and Dissertations

Semiconductor packaging and development is greatly dependent on the magnitude of interconnect and on-chip stress that ultimately limits the reliability of electronic components. Thermomechanical related strains occur because of the coefficient of thermal expansion mismatch from different conjoined materials being assembled to manufacture a device. To curb the effect of thermal expansion mismatch between conjoined parts, studies have been done in integrating compliant structures between dies, solder balls, and substrates. Initial studies have enabled the design and manufacturing of these structures using a photolithography approach which involves a high number of fabrication steps depending on the complexity of the structures …


Growth And Characterization Of Semiconductor Materials And Devices For Extreme Environments Applications, Abbas Sabbar Dec 2020

Growth And Characterization Of Semiconductor Materials And Devices For Extreme Environments Applications, Abbas Sabbar

Graduate Theses and Dissertations

Numerous industries require electronics to operate reliably in harsh environments, such as extreme high temperatures (HTs), low temperature (LT), radiation rich environments, multi-extreme, etc. This dissertation is focused on two harsh environments: HT and multi-extreme.

The first study is on HT optoelectronics for future high-density power module applications. In the power modules design, galvanic isolation is required to pass through the gate control signal, reject the transient noise, and break the ground loops. The optocoupler, which consists of a lighting emitting diode (LED) and photodetector (PD), is commonly used as the solution of galvanic isolation at room temperatures. There is …


High-Temperature Optoelectronic Device Characterization And Integration Towards Optical Isolation For High-Density Power Modules, Syam Madhusoodhanan Dec 2020

High-Temperature Optoelectronic Device Characterization And Integration Towards Optical Isolation For High-Density Power Modules, Syam Madhusoodhanan

Graduate Theses and Dissertations

Power modules based on wide bandgap (WBG) materials enhance reliability and considerably reduce cooling requirements that lead to a significant reduction in total system cost and weight. Although these innovative properties lead power modules to higher power density, some concerns still need to be addressed to take full advantage of WBG-based modules. For example, the use of bulky transformers as a galvanic isolation system to float the high voltage gate driver limits further size reduction of the high-temperature power modules. Bulky transformers can be replaced by integrating high-temperature optocouplers to scale down power modules further and achieve disrupting performance in …


Synthesis And Application Of Ceramic Paste For High-Temperature Electronic Packaging, Ardalan Nasiri Jul 2020

Synthesis And Application Of Ceramic Paste For High-Temperature Electronic Packaging, Ardalan Nasiri

Graduate Theses and Dissertations

This dissertation research focused on the synthesis and application of ceramic paste for high-temperature applications. An alumina paste material comprising aluminum dihydric phosphate and alumina powder was developed for high-temperature electronic packaging. Nano aluminum nitride and nano-silica powders were embedded to promote the paste curing process, limit the grain growth, and increase its bond shear strength. The chip-to-substrate bond strength was enhanced and met the MIL-STD requirements for die-attach assembly. Its encapsulation property was improved with fewer cracks compared to similar commercial ceramic encapsulants. The die-attach material and encapsulation properties tested at 500°C showed no defect or additional cracks. Thermal …


Fabrication And Characterization Of Graphene Based 2d Materials For Supercapacitors, Anishkumar Manoharan May 2018

Fabrication And Characterization Of Graphene Based 2d Materials For Supercapacitors, Anishkumar Manoharan

Graduate Theses and Dissertations

Supercapacitors have attracted a lot attention due to their efficient energy storage. In comparison to batteries, supercapacitors have high capacitance, energy, and power densities per unit mass than conventional capacitors. Carbon based materials are most promising in supercapacitor application due to their outstanding physical and electrochemical behavior. In this work, a facile method to synthesize a nanocomposite electrode consisting of annealed carbon from carbon ink and MoS2 was demonstrated. Effects of various aqueous and solid electrolytes were studied. It was found that the nanocomposite electrode with 10% MoS2 and 1M Na2SO4 as the aqueous electrolyte tested using the three electrode …


Investigation Of Fes2 Nanoparticles For Use In Optoelectronic And Thermoelectric Applications, Rick Tefal Eyi Nkoghe May 2017

Investigation Of Fes2 Nanoparticles For Use In Optoelectronic And Thermoelectric Applications, Rick Tefal Eyi Nkoghe

Graduate Theses and Dissertations

Iron pyrite (FeS2) is the most abundant sulfide material on earth. This material has been widely investigated by researchers because of its optical properties. However, it has been difficult to produce High efficiency FeS2 based solar cells. This is due to many different impurities that arise when making the materials. The ability to synthesize pure pyrite FeS2 material is therefore critical for applications.

Pure Iron pyrite nanocrystals were synthesized using hot injection by mixing sulfur with an iron precursor in the presence of an amine. To improve the stability, shorter ligands replaced the native amines ligands. The stability of the …


Gesn Light-Emitting Devices, Yiyin Zhou Dec 2014

Gesn Light-Emitting Devices, Yiyin Zhou

Graduate Theses and Dissertations

Silicon based optoelectronic devices have been investigated for decades. However, due to the indirect band gap nature of Si and Ge, developing of efficient light-emitting source on Si is still a challenging topic. GeSn based optoelectronic devices have the great potential to overcome this deficiency for several reasons. By adding more fraction of Sn into Ge, GeSn band gap could be reduced. The narrowed band gap could be developed for near to mid infrared applications. The alloy can even become the direct band gap material with a large Sn composition (beyond 8%). This feature could enhance the light emission from …


Metal Assisted Nanowire Growth For Silicon Nanowire/Amorphous Silicon Composite Solar Cell, Asmaa Ali Sadoon Dec 2014

Metal Assisted Nanowire Growth For Silicon Nanowire/Amorphous Silicon Composite Solar Cell, Asmaa Ali Sadoon

Graduate Theses and Dissertations

Solar cells are photovoltaic devices that convert the energy of light to electricity by the photovoltaic effect. Crystalline silicon-based solar cells are the most dominant solar cells in the market today due to the high efficiency and relatively low cost. However, the cost of such solar cell is still high due to the large amount of material that is consumed in fabricating such a device. Polycrystalline/amorphous thin films and nanomaterial technologies have emerged to reduce the high cost of c-Si based solar cells and increase the efficiency. In this research, we combined these two technologies to propose and fabricate silicon …


Investigation Of The Effects Of Rapid Thermal Annealing On Mbe Grown Gaasbi/Gaas Heterostructures For Optoelectronic Devices, Perry C. Grant Dec 2013

Investigation Of The Effects Of Rapid Thermal Annealing On Mbe Grown Gaasbi/Gaas Heterostructures For Optoelectronic Devices, Perry C. Grant

Graduate Theses and Dissertations

High efficiency optoelectronic devices rely on high quality materials making up the device structure. The scope of this thesis investigates the effectiveness of rapid thermal annealing (RTA) at improving the material quality of GaAsBi/GaAs heterostructures. During the fabrication of a device, the contacts of the device had the rapid thermal annealing process accomplished to produce ohmic contacts and this research explored if this annealing treatment degraded the quantum wells that made up the active region of a device. To investigate these effects, a system to measure the photoluminescence of the material system was constructed utilizing Fourier Transform Infrared Spectroscopy. The …


Fabrication Of Horizontal Silicon Nanowires Using A Thin Aluminum Film As A Catalyst, Khaja Hafeezuddin Mohammed Dec 2011

Fabrication Of Horizontal Silicon Nanowires Using A Thin Aluminum Film As A Catalyst, Khaja Hafeezuddin Mohammed

Graduate Theses and Dissertations

Silicon nanowires have been the topic of research in recent years for their significant attention from the electronics industry to grow even smaller electronic devices. The semiconductor industry is built on silicon. Silicon nanowires can be the building blocks for future nanoelectronic devices. Various techniques have also been reported in fabricating the silicon nanowires. But most of the techniques reported, grow vertical silicon nanowires. In the semiconductor industry, integrated circuits are designed and fabricated in a horizontal architecture i.e. the device layout is flat compared to the substrate. When vertical silicon nanowires are introduced in the semiconductor industry, a whole …