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Full-Text Articles in Chemical Engineering

In Situ Study Of The Role Of Substrate Temperature During Atomic Layer Deposition Of Hfo2 On Inp, H. Dong, Santosh Kc, X. Qin, B. Brennan, S. Mcdonnell, D. Zhernokletov, C. Hinkle, J. Kim, K. Cho, R. Wallace Oct 2013

In Situ Study Of The Role Of Substrate Temperature During Atomic Layer Deposition Of Hfo2 On Inp, H. Dong, Santosh Kc, X. Qin, B. Brennan, S. Mcdonnell, D. Zhernokletov, C. Hinkle, J. Kim, K. Cho, R. Wallace

Faculty Publications

The dependence of the “self cleaning” effect of the substrate oxides on substrate temperature during atomic layer deposition (ALD) of HfO2 on various chemically treated and native oxide InP (100) substrates is investigated using in situ X-ray photoelectron spectroscopy. The removal of In-oxide is found to be more efficient at higher ALD temperatures. The P oxidation states on native oxide and acid etched samples are seen to change, with the total P-oxide concentration remaining constant, after 10 cycles of ALD HfO2 at different temperatures. An (NH4)2 S treatment is seen to effectively remove native oxides and passivate the InP surfaces …


Indium Diffusion Through High-K Dielectrics In High-K/Inp Stacks, H. Dong, W. Cabrera, R. Galatage, Santosh Kc, B. Brennan, X. Qin, S. Mcdonnell, D. Zhernokletov, C. Hinkle, K. Cho, Y. Chabal, R. Wallace Aug 2013

Indium Diffusion Through High-K Dielectrics In High-K/Inp Stacks, H. Dong, W. Cabrera, R. Galatage, Santosh Kc, B. Brennan, X. Qin, S. Mcdonnell, D. Zhernokletov, C. Hinkle, K. Cho, Y. Chabal, R. Wallace

Faculty Publications

Evidence of indium diffusion through high-k dielectric (Al2O3 and HfO2) films grown on InP (100) by atomic layer deposition is observed by angle resolved X-ray photoelectron spectroscopy and low energy ion scattering spectroscopy. The analysis establishes that In-out diffusion occurs and results in the formation of a POx rich interface.High mobility III-V channel materials are contenders to replace Si in semiconductor devices like metal oxide semiconductor filed effect transistors (MOSFETs) for the sub 22 nm technology node.1 Extensive research is being carried out to determine the validity of these III-V materials for use as the channel, in a variety of …


Applications Of High Throughput (Combinatorial) Methodologies To Electronic, Magnetic, Optical, And Energy-Related Materials, Martin L. Green, Ichiro Takeuchi, Jason R. Hattrick-Simpers Jan 2013

Applications Of High Throughput (Combinatorial) Methodologies To Electronic, Magnetic, Optical, And Energy-Related Materials, Martin L. Green, Ichiro Takeuchi, Jason R. Hattrick-Simpers

Faculty Publications

High throughput (combinatorial) materials science methodology is a relatively new research paradigm that offers the promise of rapid and efficient materials screening, optimization, and discovery. The paradigm started in the pharmaceutical industry but was rapidly adopted to accelerate materials research in a wide variety of areas. High throughput experiments are characterized by synthesis of a “library” sample that contains the materials variation of interest (typically composition), and rapid and localized measurement schemes that result in massive data sets. Because the data are collected at the same time on the same “library” sample, they can be highly uniform with respect to …


Giant Magnetostriction In Annealed Co1-XFeX Thin-Films, Dwight Hunter, Will Osborn, Ke Wang, Nataliya Kazantseva, Jason R. Hattrick-Simpers, Richard Suchoski, Ryota Takahashi, Marcus L. Young, Apurva Mehta, Leonid A. Bendersky, Same E. Lofland, Manfred Wuttig, Ichiro Takeuchi Nov 2011

Giant Magnetostriction In Annealed Co1-XFeX Thin-Films, Dwight Hunter, Will Osborn, Ke Wang, Nataliya Kazantseva, Jason R. Hattrick-Simpers, Richard Suchoski, Ryota Takahashi, Marcus L. Young, Apurva Mehta, Leonid A. Bendersky, Same E. Lofland, Manfred Wuttig, Ichiro Takeuchi

Faculty Publications

Chemical and structural heterogeneity and the resulting interaction of coexisting phases can lead to extraordinary behaviours in oxides, as observed in piezoelectric materials at morphotropic phase boundaries and relaxor ferroelectrics. However, such phenomena are rare in metallic alloys. Here we show that, by tuning the presence of structural heterogeneity in textured Co1−xFex thin films, effective magnetostriction λeff as large as 260 p.p.m. can be achieved at low-saturation field of ~10 mT. Assuming λ100 is the dominant component, this number translates to an upper limit of magnetostriction ofλ100≈5λeff >1,000 p.p.m. Microstructural analyses …


An Infrared Imaging Method For High-Throughput Combinatorial Investigation Of Hydrogenation-Dehydrogenation And New Phase Formation Of Thin Films, H. Oguchi, Jason R. Hattrick-Simpers, I. Takeuchi, E. J. Heilweil, L. A. Bendersky Jan 2009

An Infrared Imaging Method For High-Throughput Combinatorial Investigation Of Hydrogenation-Dehydrogenation And New Phase Formation Of Thin Films, H. Oguchi, Jason R. Hattrick-Simpers, I. Takeuchi, E. J. Heilweil, L. A. Bendersky

Faculty Publications

We have developed an infrared imaging setup enabling in situ infrared images to be acquired, and expanded on capabilities of an infrared imaging as a high-throughput screening technique, determination of a critical thickness of a Pd capping layer which significantly blocks infrared emission from below, enhancement of sensitivity to hydrogenation and dehydrogenation by normalizing raw infrared intensity of a Mg thin film to an inert reference, rapid and systematic screening of hydrogenation and dehydrogenation properties of a Mg–Ni composition spread covered by a thickness gradient Pd capping layer, and detection of formation of a Mg2Si phase in a …


Proton Diffusion In Nickel Hydroxide: Prediction Of Active Material Utilization, Sathya Motupally, Christopher C. Streinz, John W. Weidner Jan 1998

Proton Diffusion In Nickel Hydroxide: Prediction Of Active Material Utilization, Sathya Motupally, Christopher C. Streinz, John W. Weidner

Faculty Publications

Galvanostatic charge and discharge experiments reveal that the active material in nickel electrodes cannot be fully accessed at high currents or for thick films. It has been proposed that the utilization of the active material is controlled by the diffusion rate of protons through the film. This hypothesis is supported by the good agreement between mathematical simulations of material utilization and experimental data over a range of charge and discharge currents and film thicknesses. Furthermore, the fraction of material utilized is larger on charge than on discharge. The asymmetry on charge and discharge is due to a diffusion coefficient that …


The Role Of Oxygen At The Second Discharge Plateau Of Nickel Hydroxide, Sathya Motupally, Mukul Jain, Venkat Srinivasan, John W. Weidner Jan 1998

The Role Of Oxygen At The Second Discharge Plateau Of Nickel Hydroxide, Sathya Motupally, Mukul Jain, Venkat Srinivasan, John W. Weidner

Faculty Publications

It was shown that the appearance of a secondary discharge plateau approximately 400 mV below the primary plateau can result from the reduction of oxygen. During the galvanostatic discharge of planar nickel-hydroxide films at room temperature and in 3 weight percent KOH solutions, the second discharge plateau was observed only in the presence of dissolved oxygen in the electrolyte. When the solution was deoxygenated, no residual capacity could be extracted from the films even at low discharge rates or from overcharged films. In addition, the duration of the second plateau is inversely proportional to the square of the discharge current, …


Ellipsometric And Raman Spectroscopic Study Of Thermally Formed Films On Titanium, E. Hristova, Lj. Arsov, Branko N. Popov, Ralph E. White Jan 1997

Ellipsometric And Raman Spectroscopic Study Of Thermally Formed Films On Titanium, E. Hristova, Lj. Arsov, Branko N. Popov, Ralph E. White

Faculty Publications

Thermal films on titanium surfaces were formed by heating titanium samples in air at atmospheric pressure. The optical constants, thickness, and structure of the formed films at various temperatures and times of heating were investigated by ellipsometry and Raman spectroscopy. The complex index of refraction and the thickness of generated films were determined by comparing the experimental loci and obtained by ellipsometric measurements with theoretical computed vs. curves. It was found that the thickness in homogeneity and porosity of formed films increase with increasing temperature and the duration of the thermal treatment. Beyond a certain critical temperature, the appearance of …


Structural Characterization Of Aluminum Films Deposited On Sputtered-Titanium Nitride/ Silicon Substrate By Metalorganic Chemical Vapor Deposition From Dimethylethylamine Alane, Xiaodong Li, Byoung-Youp Kim, Shi-Woo Rhee Dec 1995

Structural Characterization Of Aluminum Films Deposited On Sputtered-Titanium Nitride/ Silicon Substrate By Metalorganic Chemical Vapor Deposition From Dimethylethylamine Alane, Xiaodong Li, Byoung-Youp Kim, Shi-Woo Rhee

Faculty Publications

Alfilmsdeposited on sputtered‐TiN/Si substrate by metalorganic chemical vapor deposition(MOCVD) from dimethylethylamine alane (DMEAA) were characterized using x‐ray diffraction(XRD),Auger electron spectroscopy(AES),atomic force microscopy(AFM), and transmission electron microscopy (TEM). The TiN filmsputtered on the Si has a preferred orientation along the growth direction with the 〈111〉 of the film parallel to the Si〈111〉. Sputtering of the TiN film on the Si induced strains at the interface. The TiN/Si interface is flat while the Al/TiN interface is rough. There exist many dislocations at the Al/TiN interface. The Al2O3 phase was formed at the Al/TiN interface during the early stages of …


Proton Diffusion In Nickel Hydroxide Films: Measurement Of The Diffusion Coefficient As A Function Of State Of Charge, Sathya Motupally, Christopher C. Streinz, John W. Weidner Jan 1995

Proton Diffusion In Nickel Hydroxide Films: Measurement Of The Diffusion Coefficient As A Function Of State Of Charge, Sathya Motupally, Christopher C. Streinz, John W. Weidner

Faculty Publications

Electrochemical impedance spectroscopy (EIS) was used to measure the solid-state diffusion coefficient of protons in nickel hydroxide films at room temperature as a function of state of charge (SOC). A model for the complex faradaic impedance of the nickel hydroxide active material is presented and used to extract the diffusion coefficient of protons from the EIS data. Impedance data over a range of frequencies can be used to extract a constant diffusion coefficient without the knowledge of the initial mobile proton concentration or the form of the charge-transfer kinetic expression. The proton diffusion coefficient is a strong function of SOC …


Low Cost Schottky Barrier Solar Cells Fabricated On Cdse And Sb2S3 Films Chemically Deposited With Silicotungstic Acid, O. Savadogo, K. C. Mandal Oct 1994

Low Cost Schottky Barrier Solar Cells Fabricated On Cdse And Sb2S3 Films Chemically Deposited With Silicotungstic Acid, O. Savadogo, K. C. Mandal

Faculty Publications

No abstract provided.


Using Electrochemical Impedance Spectroscopy As A Tool For Organic Coating Solute Saturation Monitoring, Branko N. Popov, Mohammed A. Alwohaibi, Ralph E. White Jan 1993

Using Electrochemical Impedance Spectroscopy As A Tool For Organic Coating Solute Saturation Monitoring, Branko N. Popov, Mohammed A. Alwohaibi, Ralph E. White

Faculty Publications

Electrochemical impedance spectroscopy (EIS) has been used to study the solute uptake for epoxy/phenolic (E/p) andepoxy/amine (E/a) thick-coated mild steel samples immersed for 160 days in 3.5 weight percent NaCl solution exposed to air. Samples with thicknesses of approximately 200 µm with an exposed surface area of 22.6 cm2 were used to follow solute saturation of the organic coating. Good agreement was obtained between the calculated and measured coating capacitance when, according to the diffusion equation, the coating capacitance was plotted against exposure time.


Mathematical Modeling Of The Formation Of Calcareous Deposits On Cathodically Protected Steel In Seawater, J. F. Yan, T. V. Nguyen, Ralph E. White, R. B. Griffin Jan 1993

Mathematical Modeling Of The Formation Of Calcareous Deposits On Cathodically Protected Steel In Seawater, J. F. Yan, T. V. Nguyen, Ralph E. White, R. B. Griffin

Faculty Publications

A first principle mathematical model of the formation of calcareous deposits on a cathodically protected steel rotatingdisk electrode in seawater is presented. The model includes equations which transport phenomena, electrochemical reactions,precipitation reactions, and a homogeneous reaction involved in the formation of calcareous deposits on an electrodesurface. Predicted concentration profiles show that a high concentration of OH ions on the electrode surface leads to the formation of calcareous deposits. The calcareous deposits contain mostly CaCO3, but the initial deposits are predicted to contain more Mg(OH)2 than CaCO3. The predicted calcareous deposits on the electrode surface …


Electrochemical Characterization Of Electronically Conductive Polypyrrole On Cyclic Voltammograms, Taewhan Yeu, Ken-Ming Yin, Jose Carbajal, Ralph E. White Jan 1991

Electrochemical Characterization Of Electronically Conductive Polypyrrole On Cyclic Voltammograms, Taewhan Yeu, Ken-Ming Yin, Jose Carbajal, Ralph E. White

Faculty Publications

Experimental and theoretical cyclic voltammograms for electronically conducting polypyrrole film are obtained from the identical conditions and compared to each other to characterize electrochemical behavior of the polymer. A comparison of the simulated and experimental cyclic yoltammograms shows quantitative agreement. The profiles of the dependent variables show that the switching process is governed by the availability of the counter ion to the polypyrrole electrode and the amount of electroactive sites. Sensitivity analysis shows that the double layer effects have more influence in the cyclic voltammograms than the electrokinetic effects.