Engineering Commons^™

Synthesis And Characterization Of Metal Oxide Semiconductors For Photoelectrochemical Hydrogen Production, Sudhakar Shet

Dissertations

The goal of this thesis is to investigate the properties of metal-oxide thin films on fluorine-doped tin oxide (FTO)-coated glass substrates, prepared by using radio- frequency (RF) reactive magnetron sputtering for photoelectrochemical (PEC) applications. Metal-oxide thin films as a photoelectrode are of special interest for PEC systems to produce hydrogen in an aqueous solution by solar energy due to their low cost and potential stability.

The following list represents some of the accomplishments and results of this work:

• Narrowing of N-incorporated ZnO (ZnO:N) was achieved by reactive sputtering in a O₂/N₂ mixture ambient, and ZnO:N films with …

Experimental And Theoretical Approaches To Characterization Of Electronic Nonlinearities In Direct-Gap Semiconductors, Claudiu Cirloganu

Electronic Theses and Dissertations

The general goal of this dissertation is to provide a comprehensive description of the limitations of established theories on bound electronic nonlinearities in direct-gap semiconductors by performing various experiments on wide and narrow bandgap semiconductors along with developing theoretical models. Nondegenerate two-photon absorption (2PA) is studied in several semiconductors showing orders of magnitude enhancement over the degenerate counterpart. In addition, three-photon absorption (3PA) is studied in ZnSe and other semiconductors and a new theory using a Kane 4-band model is developed which fits new data well. Finally, the narrow gap semiconductor InSb is studied with regard to multiphoton absorption, free-carrier …

Nonlinear Absorption And Free Carrier Recombination In Direct Gap Semiconductors, Peter D. Olszak

Electronic Theses and Dissertations

Nonlinear absorption of Indium Antimonide (InSb) has been studied for many years, yet due to the complexity of absorption mechanisms and experimental difficulties in the infrared, this is still a subject of research. Although measurements have been made in the past, a consistent model that worked for both picosecond and nanosecond pulse widths had not been demonstrated. In this project, temperature dependent two-photon (2PA) and free carrier absorption (FCA) spectra of InSb are measured using femtosecond, picosecond, and nanosecond IR sources. The 2PA spectrum is measured at room temperature with femtosecond pulses, and the temperature dependence of 2PA and FCA …

Proton Irradiation Effects On Semiconductor Cdse/Zns Core/Shell Nanocrystals, Stephen Graham Charter

Graduate Theses and Dissertations

The absorbance and photoluminescence measurement of semiconductor CdSe/ZnS core shell nanocrystals were reviewed and investigated after they were exposed to proton irradiation. The CdSe/ZnS core shell nanocrystals of 3.2nm and 4.4nm were commercially purchased and investigated. These nanocrystals were embedded in UV resin. Proton irradiation of energy 2MeV was applied at doses from 3 x 1013 protons cm-2 to 1.47 x 1015 protons cm-2 for both nanocrystal sizes. Absorbance measurements were conducted at 300K. Results from absorbance measurements showed slight broadening of the first exciton peak of both samples but was most noticeable in the 3.2nm nanocrystal sample. UV resin …

Growth And Characterization Of Chromium Doped Indium Oxide Diluted Magnetic Semiconductors, Ndubuisi Benjamin Ukah

MSU Graduate Theses

Recently, enormous research efforts have been directed at diluted magnetic semiconductors (DMS) critical for realization for multi-functional spintronic devices. However, the origin of electronic and magnetic properties in DMS is not well understood. This study is aimed to better understand the structural, optical, magnetic, and magneto-transport property relationships of Cr-doped In2O3 (In2O3:Cr) DMS grown under different partial oxygen pressures on sapphire substrates using pulsed laser deposition technique. The thin films were characterized using various state-of-the-art techniques such as x-ray diffraction (XRD), UV-VIS spectroscopy, magnetotransport, and SQUID magnetometer. Expansions in lattice parameter (10.10 Å to 10.34 Å) and crystal size (13.9 …

Effect Of Mechanical Vibrations On Light Emitting Diode Luminaires, Jayalakshmi Paladugu

UNLV Theses, Dissertations, Professional Papers, and Capstones

In this work, a LED and two types of Compact fluorescent lamps were investigated for the intensity variation due to mechanical vibrations in the range of 0 to 30 HZ. In general, subjecting the lamps to 24-hour vibration affects the total intensity percentage variations of peak intensities after vibrations is in the range of -25 to +15% compared to those of no vibrations for the light emitting diode luminaires. For the case of compact fluorescent lamps (Nuvue) the variations are in range from +10 to +35%, whereas for the Compact fluorescent lamps (Ecosmart) the intensity peaks range from -10 to …

Individual Copper Nanowire Decorated By Gold Nanoparticles For Surface Enhanced Raman Scattering, Roshan Guttikonda

UNLV Theses, Dissertations, Professional Papers, and Capstones

In this Thesis, I discuss the theory, implementation and applications of Surface enhanced Raman scattering (SERS). Surface enhanced Raman scattering has been used to detect 4 mercaptopyridine molecules. On a Silicon wafer, Gold nanoparticles are deposited onto Copper nanowires. Hotspots occur at the small gap (less than 10nm) between the nanowire and nanoparticle. The interaction of the electromagnetic field of the incident laser and the surface plasmon resonances of the metal nanoparticles at the hot spots enhances the Raman scattering signal of the adsorbed pyridine molecule (10 -3 M ). The dependence of SERS signal on the polarization angle of …

A Market-Based Framework For Semiconductor Industry Growth The Reduced Ecological Impart, Dawood Sulieman Abugharbieh

Dissertations and Theses

Reducing the ecological impact of industrial development is an emerging trend that affords companies the opportunity to gain competitive advantage. Semiconductor manufacturers have specifically identified ecological impact as a strategic variable that presents a long-term challenge. The socioeconomic nature of the ecological impact construct increases decision-making complexity in a manner that is not typical in business-to-business contexts. To account for social and economic aspects, this study utilized a cognitive structure-based model. Such models have been successfully utilized in consumer and industrial markets as adaptable frameworks that can encompass social and economic constructs.

This research focuses on linking two ecological constructs …

Integrated Inp Photonic Switches, Daniel May-Arrioja

Electronic Theses and Dissertations

Photonic switches are becoming key components in advanced optical networks because of the large variety of applications that they can perform. One of the key advantages of photonic switches is that they redirect or convert light without having to make any optical to electronic conversions and vice versa, thus allowing networking functions to be lowered into the optical layer. InP-based switches are particularly attractive because of their small size, low electrical power consumption, and compatibility with integration of laser sources, photo-detectors, and electronic components. In this dissertation the development of integrated InP photonic switches using an area-selective zinc diffusion process …

High-Temperature Ferromagnetism In Transition Metal Implanted Wide-Bandgap Semiconductors, Jeremy A. Raley

Theses and Dissertations

Material with both semiconductor and magnetic properties, which is commonly called a dilute magnetic semiconductor (DMS), will prove most useful in the fabrication of spintronic devices. In order to produce a DMS at above room temperature, transition metals (TMs) were implanted into host semiconductors of p-GaN, Al_0.35Ga_0.65N, or ZnO. Magnetic hysteresis measurements using a superconducting quantum interference device (SQUID) magnetometer show that some of the material combinations clearly exhibit ferromagnetism above room temperature. The most promising materials for creating spintronic devices using ion implantation are p-GaN:Mn, Al_0.35Ga_0.65N:Cr, and Fe-implanted ZnO nanotips on …

Study Of Design Tradeoffs Of Dram And Sram Memories, Using Hspice Computer Simulation, Bageshri Kale

Theses

Semiconductor random access memories are complex systems that can be described by performance parameters such as memory cycle time, access delays, storage capacity, bit packing density, chip area and retention time. In this thesis, tradeoffs between cycle time, chip area, and storage size as reflected by bit line capacitance (Cbl) were studied as a function of particular design variables: memory cell capacitance (Cc); CMOS flip-flop sense amplifier (SA) transistor sizes; and size of precharge (PC), and word line (WL) switches. Performance was optimized using circuit simulation software, HSPICE, to observe DRAM and SRAM waveforms. With TSMC 0.18 micron technology, minimum …

Optical Characterization And Modeling Of Compositionally Matched Indium Arsenide-Antimonide Bulk And Multiple Quantum Well Semiconductors, Scott C. Phillips

Theses and Dissertations

Indium arsenide-antimonide (InAsSb) semiconductors have been determined to emit in the 3-5 micrometer range, the window of interest for countermeasures against infrared electro-optical threats. This experiment set out to cross the bulk to quantum well characterization barrier by optically characterizing two sets of compositionally matched type I quantum well and bulk well material samples. Absorption measurements determined the band gap energy of the bulk samples and the first allowed subband transition for the quantum wells. By collecting absorption spectra at different temperatures, the trend of the energy transitions was described by fitting a Varshni equation to them. The expected result …

Characterization And Mapping Of Crystal Defects In Silicon Carbide, Ejiro Emorhokpor

Theses

Silicon carbide (SiC) is a semiconductor with attractive properties, such as a wide bandgap (3. 26 eV), high dielectric strength, and high thermal conductivity that make it suitable for high power, highspeed electronic devices. A major roadblock to its wider application is the presence of defects, particularly micropipes and dislocations, in SiC wafers produced today and decreasing density of these defects is the most important challenge of the industry. The goal of this thesis was to design, build and test a system for detection and analysis of the defects in SiC wafers. The system is based on the reflection optical …

Quantum Mechanical Calculations Of Monoxides Of Silicon Carbide Molecules, John W. Roberts Jr.

Theses and Dissertations

Modern semiconductor devices are principally made using the element silicon. In recent years, silicon carbide (SiC), with its wide band-gap, high thermal conductivity, and radiation resistance, has shown prospects as a semiconductor material for use in high temperature and radiation environments such as jet engines and satellites. A limiting factor in the performance of many SiC semiconductor components is the presence of lattice defects formed at oxide dielectric junctions during processing. Recent theoretical work has used small quantum mechanical systems embedded in larger molecular mechanics structures to attempt to better understand SiC surfaces and bulk materials and their oxidation. This …

Formation And Characterization Of N/P Shallow Junctions In Sub-Micron Mosfets, Sridhar Madishetty

Theses

Semiconductors are the burgeoning industries in today's information age. Silicon based microelectronic devices are shrinking day-by-day in accord with the scaling dimensions reported by the International Technology Roadmap for Semiconductors (ITRS). There have been many semiconductor models and simulation programs constantly keeping pace with the continuously evolving scaling dimensions, process technology, performance and cost. Electrical characterization plays a vital role in determining the electrical properties of materials and device structures. Silicon based Metal Oxide Semiconductor Field Effect Transistor (MOSFET) forms the basis of Complimentary Metal Oxide Semiconductor (CMOS) circuits. Today's aggressive scaling approaches in silicon Integrated Circuit (IC) technology require …

Numerical Study Of Optical Delay In Semiconductor Multilayer Distributed Bragg Reflector And Tunable Microcavity Structures, Michael I. K. Etan

Theses and Dissertations

The Air Force has a growing need for the greater bandwidth, speed, and flexibility offered by optical communication links. Future space systems and airborne platforms will most likely use optical signals for efficient power transmission and to minimize the possibility of spoofing and eavesdropping. Tunable optical delays play an important role in the implementation of free space optical communication links. The primary challenge in implementing these systems is the active maintenance of coherent wave fronts across the system's optical aperture. For space applications, this aperture may he hundreds of meters in diameter. Spatial segmentation of a large aperture into smaller …

Fdtd-Based Full Wave Co-Simulation Model For Hybrid Electromagnetic Systems, Tong Li

Dissertations

In high-frequency ranges, the present electronic design automation software has limited capabilities to model electromagnetic (EM) systems where there are strong field effects influencing their characteristics. In this situation, a full-wave simulation tool is desired for the analysis and design of high-speed and non-linear EM systems. It is necessary to explore the interaction between the field and electronic components during a transient process when field effects are more significant. The finite-difference time-domain (FDTD) technique receives growing attention in the area of EM system analysis and simulation due to its simplicity, flexibility and robustness. It is a full-wave simulation method that …

Investigation Of Optical Properties Of Inp, Ain And Sapphire For Applications In Non-Contact Semiconductor Process Monitoring, Rajasekhar Velagapudi

Theses

The objective of this thesis was to develop a reliable multi-wavelength pyrometer for simultaneous measurement of the wafer temperature and its optical properties in the wavelength range of 1 to 20 microns and temperature range of 30 to 1500° C. The spectral emissometer has been utilized for measurement of the temperature dependent optical properties of InP, AlN and Sapphire. The experimental results presented in this thesis showed that the measurement of high temperature optical properties could be performed reliably with a novel approach using the spectral ernissometer. The temperature determination capability of the emissometer was tested and verified using a …

Measurements Of Basic Semiconductor Properties, Abdolreza Ariantaj

Theses

Mobility, resistivity, and total impurity concentration of several purchased p-type silicon samples with known resistivities were measured by Hall effect, experiments utilizing the Van Der Pauw method. The silicon samples will serve as Hall effect standards for future measurements on other semiconductor materials, particularly gallium nitride ion cluster beam (ICB) deposited thin films. The samples which were Freshly etched with hydrofluoric acid had measurement values of 455 cm ² / V.sec, 45.9 Ω cm, and 2.6 X 10¹⁴ cm³ for mobility, resistivity, and total impurity concentration, respectively. The mobility values were within 9.9 per cent, of the published values …

The Purification, Analysis And Growth Of Single Crystals Of Organic Semiconductors, Melvin Leonard Druin

Theses

The purpose of this investigation was to design and construct a furnace for growing large single crystals of organic compounds by slow crystallization from the melt by the Bridgman technique. The crystals obtained by this furnace will be used in a later investigation of the intrinsic electrical and optical properties of organic semiconductors.

The methods describe have been used width success to produce large single crystals of anthracene and ethyl-p aminobenzoate with diameters of 1/2 inch.

The most promising methods of purification of anthracene, which were chemical synthesis, washing, recrystallization from solvents, sublimation, dimerization, co-distallatian and zone refining have been …