Engineering Commons^™

Methods For Coating Quartz Crystals, William Patrick

Senior Honors Projects, 2010-2019

The goal of this project was to evaluate the effectiveness a procedure that can be used to coat quartz crystal microbalance crystals with titanium dioxide. A successful suspension was created by suspending titanium dioxide powder in poly(acrlic) acid and mixed in an ultra-sonication bath. By utilizing a spin-coater, the TiO₂ suspension was successfully dispensed onto a QCM crystal and verified using a surface profiler and microscope. However, after QCM testing, there was no evidence that supports the TiO₂ precursor aiding in photocatalytic reactions.

Control Of Cation Ordering In Zinc Tin Nitride And In-Situ Monitoring Of Growth, Brian Christopher Durant

Masters Theses

Semiconducting materials with a band gap around 1.5 eV are very much sought after due to their close match to the solar spectrum. However, some compounds that have shown promise for highly efficient solar cells contain rare, expensive, and sometimes toxic elements, such as indium and gallium. As such, a search for earth abundant materials has become more prominent recently. One such earth abundant semiconducting material that has garnered interest is ZnSnN₂. It has been shown through previous studies that there is the possibility of continuously tuning the band gap between 1.0 and 2.0 eV by controlling the …

Electrocatalyst Decorated Hematite Nanowire Arrays For Photoelectrochemical Water Splitting., Erica James

College of Arts & Sciences Senior Honors Theses

Solar power is a leading option for renewable energy. However, storing solar energy is one of the leading pitfalls in this field, and one viable option is to store solar energy in chemical bonds, for example in H2 via water splitting. Hematite, α-Fe2O3, is one of the possible semiconductors that has been researched to drive photoelectrolysis of water. Hematite alone is not a decent material for photoelectrolysis because of the large activation energy required to begin the reaction. To make hematite more useful for photoelectrolysis an electrocatalyst, such as nickel oxide, is needed. In this experiment, nickel (II) nitrate was …

Exchange Mechanisms In Macroscopic Ordered Organic Magnetic Semiconductors, Naveen Rawat

Graduate College Dissertations and Theses

Small molecule organic semiconductors such as phthalocyanines and their derivatives represent a very interesting alternative to inorganic semiconductor materials for the development of flexible electronic devices such as organic thin field effect transistors, organic Light Emitting Diodes and photo-voltaic cells. Phthalocyanine molecules can easily accommodate a variety of metal atoms as well in the central core of the molecule, resulting in wide range of magnetic properties. Exploration of optical properties of organic crystalline semiconductors thin films is challenging due to sub-micron grain sizes and the presence of numerous structural defects, disorder and grain boundaries. However, this can be overcome by …

Molecular Dynamics Study On Defect Reduction Strategies Towards The Fabrication Of High Performance Cd1-Xznxte/Cds Solar Cells, Jose Juan Chavez

Open Access Theses & Dissertations

Cadmium Telluride is a material widely used in terrestrial thin film photovoltaic applications due to its nearly ideal band gap (~1.5 eV) and high absorption coefficient. Due to its low manufacturing cost, this technology has the potential to become a significant energy resource if higher energy conversion efficiencies are achieved. However, the module efficiencies (~14%) are still far from the theoretical maximum (~30%) for this material in a single junction configuration. The reason behind this low performance is attributed to the high number of defects that are present within the device materials. The physics behind the formation mechanisms of these …

Two-Photon Absorption In Bulk Semiconductors And Quantum Well Structures And Its Applications, Himansu Pattanaik

Electronic Theses and Dissertations

The purpose of this dissertation is to provide a study and possible applications of two-photon absorption (2PA), in direct-gap semiconductors and quantum-well (QW) semiconductor structures. One application uses extremely nondegenerate (END) 2PA, for mid-infrared (mid-IR) detection in uncooled semiconductors. The use of END, where the two photons have very different energies gives strong enhancement comapared to degenerate 2PA. This END-2PA enhanced detection is also applied to mid-IR imaging and light detection and ranging (LIDAR) in uncooled direct-gap photodiodes. A theoretical study of degenerate 2PA (D-2PA) in quantum wells, QWs, is presented, along with a new theory of ND 2PA in …

Optical Metrology For Directed Self-Assembly Patterning Using Mueller Matrix Spectroscopic Ellipsometry Based Scatterometry, Dhairya J. Dixit

Legacy Theses & Dissertations (2009 - 2024)

The semiconductor industry continues to drive patterning solutions that enable devices with higher memory storage capacity, faster computing performance, lower cost per transistors, and higher transistor density. These developments in the field of semiconductor manufacturing along with the overall minimization of the size of transistors require cutting-edge metrology tools for characterization.

Nanoparticle Generation And Interactions With Surfaces In Vacuum Systems, Yashdeep Khopkar

Legacy Theses & Dissertations (2009 - 2024)

Extreme ultraviolet lithography (EUVL) is the most likely candidate as the next generation technology beyond immersion lithography to be used in high volume manufacturing in the semiconductor industry. One of the most problematic areas in the development process is the fabrication of mask blanks used in EUVL. As the masks are reflective, there is a chance that any surface aberrations in the form of bumps or pits could be printed on the silicon wafers. There is a strict tolerance to the number density of such defects on the mask that can be used in the final printing process. Bumps on …

Design And Development Of Stress Engineering Techniques For Iii-Nitride Epitaxy On Si, Jeff Leathersich

Legacy Theses & Dissertations (2009 - 2024)

III-Nitrides have been a heavily researched material system for decades. Their material properties are favorable for a number of applications, most commonly in the optoelectronic and power device industry. Currently a majority of commercialized devices are fabricated on sapphire and SiC substrates but these are expensive and limit the widespread commercialization of the technology. There is substantial ongoing research geared toward the development of GaN on Si substrates because of the significant cost saving that would be realized through the inexpensive, large wafer and maturity of Si fabrication. Significant challenges with the deposition of GaN on Si have, thus far, …

An Assessment Of Critical Dimension Small Angle X-Ray Scattering Metrology For Advanced Semiconductor Manufacturing, Charles Michael Settens

Legacy Theses & Dissertations (2009 - 2024)

Simultaneous migration of planar transistors to FinFET architectures, the introduction of a plurality of materials to ensure suitable electrical characteristics, and the establishment of reliable multiple patterning lithography schemes to pattern sub-10 nm feature sizes imposes formidable challenges to current in-line dimensional metrologies. Because the shape of a FinFET channel cross-section immediately influences the electrical characteristics, the evaluation of 3D device structures requires measurement of parameters beyond traditional critical dimension (CD), including their sidewall angles, top corner rounding and footing, roughness, recesses and undercuts at single nanometer dimensions; thus, metrologies require sub-nm and approaching atomic level measurement uncertainty.

Gallium Nitride: Analysis Of Physical Properties And Performance In High-Frequency Power Electronic Circuits, Dalvir K. Saini

Browse all Theses and Dissertations

Gallium nitride (GaN) technology is being adopted in a variety of power electronic applications due to their high efficiencies even at high switching speeds. In comparison with the silicon (Si) transistors, the GaN-based devices exhibit lower on-state resistance and parasitic capacitances. The thermal performance of the GaN transistors are also better than the Si counterparts due to their higher junction temperature and lower temperature-coefficient of on-resistance. These unique properties make the gallium-nitride power transistors an appropriate selection for power electronic converters and radio-frequency power amplifiers, where size, efficiency, power density, and dynamic performance are major requirements.

Foreseeing the immense capabilities …

Fundamental Studies Of Supported Graphene Interfaces : Defect Density Of States In Graphene Field Effect Transistors (Fets) And Ideal Graphene - Silicon Schottky Diodes, Dhiraj Sinha

Legacy Theses & Dissertations (2009 - 2024)

The physics of transport in atomically thin 2D materials is an active area of research, important for understanding fundamental properties of reduced dimensional materials and for applications. New phenomena based on graphene may include properties of topologically protected insulators. Applications of these materials are envisioned in electronics, optoelectronics and spintronics.

Oxide Defect Engineering Methods For Valence Change (Vcm) Resistive Random Access Memories, Jihan Ocampo Capulong

Legacy Theses & Dissertations (2009 - 2024)

Electrical switching requirements for resistive random access memory (ReRAM) devices are multifaceted, based on device application. Thus, it is important to obtain an understanding of these switching properties and how they relate to the oxygen vacancy concentration and oxygen vacancy defects. Oxygen vacancy defects in the switching oxide of valence-change-based ReRAM (VCM ReRAM) play a significant role in device switching properties. Oxygen vacancies facilitate resistive switching as they form the conductive filament that changes the resistance state of the device. This dissertation will present two methods of modulating the defect concentration in VCM ReRAM composed of Pt/HfO_x/Ti stack: …

Towards A Fundamental Understanding Of Inhomogeneous Interfaces Utilizing Ballistic Electron Emission Microscopy, Robert John Balsano

Legacy Theses & Dissertations (2009 - 2024)

A fundamental understanding of charge transport across metal/semiconductor interfaces is of great technological and scientific importance. Metal/semiconductor, or Schottky barrier devices are widely utilized in sensing applications and power electronics. Additionally, Schottky barriers appear in resistive memory technology and current transistor technology. Although Schottky interfaces are ubiquitous, the effects of spatially variant interfaces on the measured Schottky barrier height (SBH) are not entirely understood. For these reasons it is necessary to explore the spatial variation at Schottky interfaces at the nanoscale. Ballistic electron emission microscopy (BEEM) is a three terminal scanning tunneling microscopy (STM) technique used to measure hot carrier …

Phonon Transport Analysis Of Semiconductor Nanocomposites Using Monte Carlo Simulations, Mayank Malladi

All Theses

Nanocomposites are composite materials which incorporate nanosized particles, platelets or fibers. The addition of nanosized phases into the bulk matrix can lead to significantly different material properties compared to their macrocomposite counterparts. For nanocomposites, thermal conductivity is one of the most important physical properties. Manipulation and control of thermal conductivity in nanocomposites have impacted a variety of applications. In particular, it has been shown that the phonon thermal conductivity can be reduced significantly in nanocomposites due to the increase in phonon interface scattering while the electrical conductivity can be maintained. This extraordinary property of nanocomposites has been used to enhance …

Fluorescence Characterization Of Quantum Dots For Use As Biomarkers, Logan M. Grimes

Materials Engineering

Fluorescence profiles of quantum dots (QDs) were characterized to select the ideal QDs for encapsulation in phospholipids for use as biomarkers to selectively adhere to cancer cells. QDs were synthesized and extracted 0, 30, 60, and 90 seconds after precursor compounds were mixed. These extractions were isolated by extraction time. Portions from each vial were coated in a zinc sulfide shelling procedure, leaving at least half of the QD solution unshelled. These samples were characterized over four days to monitor fluctuations in fluorescence. This was done utilizing an Ocean Optics spectrometer in conjunction with Spectra Suite software. The central wavelength, …

Ultrafast Laser Material Processing For Photonic Applications, Mark Ramme

Electronic Theses and Dissertations

Femtosecond Laser Direct Writing (FLDW) is a viable technique for producing photonic devices in bulk materials. This novel manufacturing technique is versatile due to its full 3D fabrication capability. Typically, the only requirement for this process is that the base material must be transparent to the laser wavelength. The modification process itself is based on non-linear energy absorption of laser light within the focal volume of the incident beam. This thesis addresses the feasibility of this technique for introducing photonic structures into novel dielectric materials. Additionally, this work provides a deeper understanding of the lightmatter interaction mechanism occurring at high …

Crystal Growth, Characterization And Fabrication Of Cdznte-Based Nuclear Detectors, Ramesh Madhu Krishna

Theses and Dissertations

In today's world, nuclear radiation is seeing more and more use by humanity as time goes on. Nuclear power plants are being built to supply humanity's energy needs, nuclear medical imaging is becoming more popular for diagnosing cancer and other diseases, and control of weapons-grade nuclear materials is becoming more and more important for national security. All of these needs require high-performance nuclear radiation detectors which can accurately measure the type and amount of radiation being used. However, most current radiation detection materials available commercially require extensive cooling, or simply do not function adequately for high-energy gamma-ray emitting nuclear materials …

Mueller Based Scatterometry And Optical Characterization Of Semiconductor Materials, Gangadhara Raja Muthinti

Legacy Theses & Dissertations (2009 - 2024)

Scatterometry is one of the most useful metrology methods for the characterization and control of critical dimensions (CD) and the detailed topography of periodic structures found in microelectronics fabrication processes. Spectroscopic ellipsometry (SE) and normal incidence reflectometry (NI) based scatterometry are the most widely used optical methodologies for metrology of these structures. Evolution of better optical hardware and faster computing capabilities led to the development of Mueller Matrix (MM) based Scatterometry (MMS). Dimensional metrology using full Mueller Matrix (16 element) scatterometry in the wavelength range of 245nm-1000nm was discussed in this work. Unlike SE and NI, MM data provides complete …

Understanding Defect Interactions In Si Ultra-Shallow P-N Junctions Formed By Very Low Energy Boron Implantation, Lakshmanan H. Vanamurthy

Legacy Theses & Dissertations (2009 - 2024)

One of the biggest challenges in the scaling of CMOS devices is the formation of a highly activated, abrupt, defect free Source drain extension (SDE) region. This is especially difficult with p-FET's because of the (1) Boron diffusion co-efficient enhancement from Transient enhanced diffusion (TED) and (2) low solid solubility of

Characterization And Modeling Of 4h-Sic Low Voltage Mosfets And Power Mosfets, Mihir Mudholkar

Graduate Theses and Dissertations

The integration of low voltage and high voltage circuits on SiC has profound applications. SiC power devices have proved their superiority in terms of high temperature operation, faster switching frequencies and larger power densities when compared with Si power devices. The control of SiC power devices however, lies in the hands of low voltage circuits built on Si. Thus, there exists a separation in the overall system between the low voltage and high voltage side, which increases system cost, weight and reduces efficiency. With the advancement in low voltage SiC processing technology, low voltage control circuits can be made on …

Multiscale Simulation Of Laser Ablation And Processing Of Semiconductor Materials, Lalit Shokeen

Electronic Theses and Dissertations

We present a model of laser-solid interactions in silicon based on an empirical potential developed under conditions of strong electronic excitations. The parameters of the interatomic potential depends on the temperature of the electronic subsystem Te, which is directly related to the density of the electron-hole pairs and hence the number of broken bonds. We analyze the dynamics of this potential as a function of electronic temperature Te and lattice temperature Tion. The potential predicts phonon spectra in good agreement with finite-temperature densityfunctional theory, including the lattice instability induced by the high electronic excitations. For 25fs pulse, a wide range …

Modified Statistical Dynamical Diffraction Theory : A Novel Metrological Analysis Method For Partially Relaxed And Defective C Doped Si And Sige Heterostructures, Paul Kenneth Shreeman

Legacy Theses & Dissertations (2009 - 2024)

The statistical dynamical diffraction theory, which has been initially developed by late Kato remained in obscurity for many years due to intense and difficult mathematical treatment that proved to be quite challenging to implement and apply. With assistance of many authors in past (including Bushuev, Pavlov, Pungeov, and among the others), it became possible to implement this unique x-ray diffraction theory that combines the kinematical (ideally imperfect) and dynamical (the characteristically perfect diffraction) into a single system of equations controlled by two factors determined by long range order and correlation function within the structure. The first stage is completed by …

Surface Potential Measurements Of Reconfigurable P-N Junctions In Graphene, Yunfei Wang

Legacy Theses & Dissertations (2009 - 2024)

Manipulation and control of electron current in a graphene p-n junction (e.g. electron waveguiding, reflection, focusing) is directly determined by the spatial gradient of the Fermi level across the junction. Sharp Fermi level gradients are associated with negative index `lensing' of electrons in graphene while broader gradients are predicted to form reflective boundaries. Quantitative metrology of the Fermi level gradient at p-n junctions is thus essential to determine device performance, validate models for device design and switch architectures, and quantitatively determine the impact of defects on device function and leakage.

Synthesis And Characterization Of Cdse-Zns Core-Shell Quantum Dots For Increased Quantum Yield, Joshua James Angell

Master's Theses

Quantum dots are semiconductor nanocrystals that have tunable emission through changes in their size. Producing bright, efficient quantum dots with stable fluorescence is important for using them in applications in lighting, photovoltaics, and biological imaging. This study aimed to optimize the process for coating CdSe quantum dots (which are colloidally suspended in octadecene) with a ZnS shell through the pyrolysis of organometallic precursors to increase their fluorescence and stability. This process was optimized by determining the ZnS shell thickness between 0.53 and 5.47 monolayers and the Zn:S ratio in the precursor solution between 0.23:1 and 1.6:1 that maximized the relative …

Cost-Effective Imprint Template Fabrication For Step And Flash Imprint Lithography, Adam Marc Munder

Legacy Theses & Dissertations (2009 - 2024)

The College of Nanoscale Science and Engineering (CNSE) is studying imprint template fabrication with the 100kV Vistec VB300 Gaussian E-Beam writer. The major goal is to develop and advance imprint template fabrication technology using low cost quartz wafers for proof-of-concept demonstrations.

Optimization And Development Of Silicon-Based Semiconductor Devices Using Tcad, Changwoo Lee

Legacy Theses & Dissertations (2009 - 2024)

Computer simulation of the electrical and optical properties of semiconductor devices has been became as an essential tool for developing new device as well as for improving existing device. This presentation describes applications of physical device simulation: (1) design optimization of power MOSFET, which is single crystalline based silicon semiconductor device, for cryogenic temperature application and (2) two-dimensional device simulation of amorphous silicon based solar cell to develop novel photovoltaic device with high efficiency.

Synthesis And Characterization Of Metal Oxide Semiconductors For Photoelectrochemical Hydrogen Production, Sudhakar Shet

Dissertations

The goal of this thesis is to investigate the properties of metal-oxide thin films on fluorine-doped tin oxide (FTO)-coated glass substrates, prepared by using radio- frequency (RF) reactive magnetron sputtering for photoelectrochemical (PEC) applications. Metal-oxide thin films as a photoelectrode are of special interest for PEC systems to produce hydrogen in an aqueous solution by solar energy due to their low cost and potential stability.

The following list represents some of the accomplishments and results of this work:

• Narrowing of N-incorporated ZnO (ZnO:N) was achieved by reactive sputtering in a O₂/N₂ mixture ambient, and ZnO:N films with …

Experimental And Theoretical Approaches To Characterization Of Electronic Nonlinearities In Direct-Gap Semiconductors, Claudiu Cirloganu

Electronic Theses and Dissertations

The general goal of this dissertation is to provide a comprehensive description of the limitations of established theories on bound electronic nonlinearities in direct-gap semiconductors by performing various experiments on wide and narrow bandgap semiconductors along with developing theoretical models. Nondegenerate two-photon absorption (2PA) is studied in several semiconductors showing orders of magnitude enhancement over the degenerate counterpart. In addition, three-photon absorption (3PA) is studied in ZnSe and other semiconductors and a new theory using a Kane 4-band model is developed which fits new data well. Finally, the narrow gap semiconductor InSb is studied with regard to multiphoton absorption, free-carrier …

Nonlinear Absorption And Free Carrier Recombination In Direct Gap Semiconductors, Peter D. Olszak

Electronic Theses and Dissertations

Nonlinear absorption of Indium Antimonide (InSb) has been studied for many years, yet due to the complexity of absorption mechanisms and experimental difficulties in the infrared, this is still a subject of research. Although measurements have been made in the past, a consistent model that worked for both picosecond and nanosecond pulse widths had not been demonstrated. In this project, temperature dependent two-photon (2PA) and free carrier absorption (FCA) spectra of InSb are measured using femtosecond, picosecond, and nanosecond IR sources. The 2PA spectrum is measured at room temperature with femtosecond pulses, and the temperature dependence of 2PA and FCA …