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Full-Text Articles in Engineering
Low Cost Schottky Barrier Solar Cells Fabricated On Cdse And Sb2S3 Films Chemically Deposited With Silicotungstic Acid, O. Savadogo, K. C. Mandal
Low Cost Schottky Barrier Solar Cells Fabricated On Cdse And Sb2S3 Films Chemically Deposited With Silicotungstic Acid, O. Savadogo, K. C. Mandal
Krishna C. Mandal
No abstract provided.
Novel Chemical Preparative Route For Semiconducting Mose2 Thin Films, K. C. Mandal, O. Savadogo
Novel Chemical Preparative Route For Semiconducting Mose2 Thin Films, K. C. Mandal, O. Savadogo
Krishna C. Mandal
No abstract provided.
Applications Of High Throughput Screening Tools For Thermoelectric Materials, W. Wong-Ng, H. Joress, J. Martin, Y. Yan, M. Otani, E. Thomas, M. Green, Jason Hattrick-Simpers
Applications Of High Throughput Screening Tools For Thermoelectric Materials, W. Wong-Ng, H. Joress, J. Martin, Y. Yan, M. Otani, E. Thomas, M. Green, Jason Hattrick-Simpers
Jason R. Hattrick-Simpers
No abstract provided.
Giant Magnetostriction In Annealed Co1-XFeX Thin-Films, Dwight Hunter, Will Osborn, Ke Wang, Nataliya Kazantseva, Jason R. Hattrick-Simpers, Richard Suchoski, Ryota Takahashi, Marcus L. Young, Apurva Mehta, Leonid A. Bendersky, Same E. Lofland, Manfred Wuttig, Ichiro Takeuchi
Giant Magnetostriction In Annealed Co1-XFeX Thin-Films, Dwight Hunter, Will Osborn, Ke Wang, Nataliya Kazantseva, Jason R. Hattrick-Simpers, Richard Suchoski, Ryota Takahashi, Marcus L. Young, Apurva Mehta, Leonid A. Bendersky, Same E. Lofland, Manfred Wuttig, Ichiro Takeuchi
Jason R. Hattrick-Simpers
Chemical and structural heterogeneity and the resulting interaction of coexisting phases can lead to extraordinary behaviours in oxides, as observed in piezoelectric materials at morphotropic phase boundaries and relaxor ferroelectrics. However, such phenomena are rare in metallic alloys. Here we show that, by tuning the presence of structural heterogeneity in textured Co1−xFex thin films, effective magnetostriction λeff as large as 260 p.p.m. can be achieved at low-saturation field of ~10 mT. Assuming λ100 is the dominant component, this number translates to an upper limit of magnetostriction ofλ100≈5λeff >1,000 p.p.m. Microstructural analyses …
Microwave Dielectric Properties Of Epitaxial Mn-Doped Ba(Zr,Ti)O-3 Thin Films On Laalo3 Substrates, Ming Liu, Chunrui Ma, Jian Liu, Gregory Collins, Chonglin Chen, Andy Alemayehu, Guru Subramanyam, Chao Dai, Yuan Lin, Amar Bhalla
Microwave Dielectric Properties Of Epitaxial Mn-Doped Ba(Zr,Ti)O-3 Thin Films On Laalo3 Substrates, Ming Liu, Chunrui Ma, Jian Liu, Gregory Collins, Chonglin Chen, Andy Alemayehu, Guru Subramanyam, Chao Dai, Yuan Lin, Amar Bhalla
Guru Subramanyam
Environmental friendly ferroelectric relaxor Ba(Zr0.2Ti0.8)O3 thin films with an additional 2% Mn dopant were epitaxially fabricated on the (001) LaAlO3 single crystal substrates by pulsed laser deposition. Microstructure characterizations from x-ray diffraction suggest that the films are c-axis oriented with the interface relationship of [101]Mn:BZT//[100]LAO and (001)Mn:BZT //(001)LAO. The microwave dielectric property measurements (13–17.5 GHz) reveal that the films have excellent dielectric properties with large tunability, high dielectric constant, and low dielectric loss, which the average value is 25.9%, 169 and 0.054, respectively. It is indicated that the additional 2% Mn doped Ba(Zr0.2Ti0.8)O3 thin films can be used for the …
Challenges And Opportunities For Multi-Functional Oxide Thin Films For Voltage Tunable Radio-Frequency/Microwave Components, Guru Subramanyam, M W. Cole, Nian X. Sun, Thottam S. Kalkur, Nick M. Sbrockey, Gary S. Tompa, Xiaomei Guo, Chonglin Chen, S P. Alpay, G A. Rossetti Jr., Kaushik Dayal, Long-Qing Chen, Darrell G. Schlom
Challenges And Opportunities For Multi-Functional Oxide Thin Films For Voltage Tunable Radio-Frequency/Microwave Components, Guru Subramanyam, M W. Cole, Nian X. Sun, Thottam S. Kalkur, Nick M. Sbrockey, Gary S. Tompa, Xiaomei Guo, Chonglin Chen, S P. Alpay, G A. Rossetti Jr., Kaushik Dayal, Long-Qing Chen, Darrell G. Schlom
Guru Subramanyam
There has been significant progress on the fundamental science and technological applications of complex oxides and multiferroics. Among complex oxide thin films, barium strontium titanate (BST) has become the material of choice for room-temperature-based voltage-tunable dielectric thin films, due to its large dielectric tunability and low microwave loss at room temperature. BST thin film varactor technology based reconfigurable radio frequency (RF)/microwave components have been demonstrated with the potential to lower the size, weight, and power needs of a future generation of communication and radar systems. Low-power multiferroic devices have also been recently demonstrated. Strong magneto-electric coupling has also been demonstrated …
Challenges And Opportunities For Multi-Functional Oxide Thin Films For Voltage Tunable Radio Frequency/Microwave Components, Guru Subramanyam, Melanie W. Cole, Nian X. Sun, Thottam S. Kalkur, Nick M. Sbrockey, Gary S. Tompa, Xiaomei Guo, Chonglin Chen, S. P. Alpay, G. A. Rossetti, Kaushik Dayal, Long-Qing Chen, Darrell Schlom
Challenges And Opportunities For Multi-Functional Oxide Thin Films For Voltage Tunable Radio Frequency/Microwave Components, Guru Subramanyam, Melanie W. Cole, Nian X. Sun, Thottam S. Kalkur, Nick M. Sbrockey, Gary S. Tompa, Xiaomei Guo, Chonglin Chen, S. P. Alpay, G. A. Rossetti, Kaushik Dayal, Long-Qing Chen, Darrell Schlom
Guru Subramanyam
There has been significant progress on the fundamental science and technological applications of complex oxides and multiferroics. Among complex oxide thin films, barium strontium titanate (BST) has become the material of choice for room-temperature-based voltage-tunable dielectric thin films, due to its large dielectric tunability and low microwave loss at room temperature. BST thin film varactor technology based reconfigurable radio frequency (RF)/microwave components have been demonstrated with the potential to lower the size, weight, and power needs of a future generation of communication and radar systems. Low-power multiferroic devices have also been recently demonstrated. Strong magneto-electric coupling has also been demonstrated …
Single Crystal Fe Films Grown On Ge(001) Substrates By Magnetron Sputtering, J. Lou, A. Daigle, L. Chen, Y. Q. Wu, V. G. Harris, C. Vittoria, N. X. Sun
Single Crystal Fe Films Grown On Ge(001) Substrates By Magnetron Sputtering, J. Lou, A. Daigle, L. Chen, Y. Q. Wu, V. G. Harris, C. Vittoria, N. X. Sun
Nian X. Sun
Single crystal Fe films were grown on Ge (001) substrates by using dc magnetron sputtering. It was found that the microstructures and magnetic properties of Fe films on Ge substrates were strongly dependent upon the substrate temperature during the deposition process. There existed a narrow substrate temperature window of 125 ± 25°C for achieving single crystal Fe film on Ge. Lower substrate temperature led to polycrystalline Fe films due to limited mobility of Fe atoms, while higher substrate temperatures resulted in amorphous Fe-Ge alloy due to severe interdiffusion.
Ba-Hexaferrite Films For Next Generation Microwave Devices, Vincent Girard Harris (1962-), Zhaohui Chen, Yajie Chen, Soack Dae Yoon, Tomokuza Sakai, Anton Geiler, Aria Fan Yang, Yongxue He, Katherine S. Ziemer, Nian X. Sun, C. Vittoria
Ba-Hexaferrite Films For Next Generation Microwave Devices, Vincent Girard Harris (1962-), Zhaohui Chen, Yajie Chen, Soack Dae Yoon, Tomokuza Sakai, Anton Geiler, Aria Fan Yang, Yongxue He, Katherine S. Ziemer, Nian X. Sun, C. Vittoria
Anton Geiler
Next generation magnetic microwave devices require ferrite films to be thick (>300 μm), self-biased (high remanent magnetization), and low loss in the microwave and millimeter wave bands. Here we examine recent advances in the processing of thick Ba-hexaferrite (M-type) films using pulsed laser deposition (PLD), liquid-phase epitaxy, and screen printing. These techniques are compared and contrasted as to their suitability for microwave materials processing and industrial production. Recent advances include the PLD growth of BaM on wide-band-gap semiconductor substrates and the development of thick, self-biased, low-loss BaM films by screen printing.
Ba-Hexaferrite Films For Next Generation Microwave Devices, Vincent Harris (1962-), Zhaohui Chen, Yajie Chen, Soack Yoon, Tomokuza Sakai, Anton Geiler, Aria Yang, Yongxue He, Katherine Ziemer, Nian Sun, C. Vittoria
Ba-Hexaferrite Films For Next Generation Microwave Devices, Vincent Harris (1962-), Zhaohui Chen, Yajie Chen, Soack Yoon, Tomokuza Sakai, Anton Geiler, Aria Yang, Yongxue He, Katherine Ziemer, Nian Sun, C. Vittoria
Nian X. Sun
Next generation magnetic microwave devices require ferrite films to be thick (>300 μm), self-biased (high remanent magnetization), and low loss in the microwave and millimeter wave bands. Here we examine recent advances in the processing of thick Ba-hexaferrite (M-type) films using pulsed laser deposition (PLD), liquid-phase epitaxy, and screen printing. These techniques are compared and contrasted as to their suitability for microwave materials processing and industrial production. Recent advances include the PLD growth of BaM on wide-band-gap semiconductor substrates and the development of thick, self-biased, low-loss BaM films by screen printing.
Effects Of Boron Addition To The Atomic Structure And Soft Magnetic Properties Of Fecob Films, Aria Yang, Hassan Imrane, Jing Lou, Johnny Kirkland, Carmine Vittoria, Nian Sun, Vincent G. Harris
Effects Of Boron Addition To The Atomic Structure And Soft Magnetic Properties Of Fecob Films, Aria Yang, Hassan Imrane, Jing Lou, Johnny Kirkland, Carmine Vittoria, Nian Sun, Vincent G. Harris
Nian X. Sun
The magnetic, microwave, and the atomic structure properties of (Fe₀.₇Co₀.₃)1-xBx sputtered films on glass substrates were investigated. The addition of boron induced a decrease in coercivity and ferromagnetic resonance linewidth. The amorphous structure was formed at x ∽0.075. Extended x-ray absorption fine structure (EXAFS) of Fe and Co showed the reduced Fourier transform (FT) amplitude, and increased Debye-Waller factors as x was increased, indicating the increased disorder due to the thermal and structural displacements. Possible Fe-B bonding was observed with a reduced bond length, which indicates boron atoms' preference for staying in the interstitial sites in bcc unit cell.
Ba-Hexaferrite Films For Next Generation Microwave Devices, Vincent Girard Harris (1962-), Zhaohui Chen, Yajie Chen, Soack Dae Yoon, Tomokuza Sakai, Anton Geiler, Aria Fan Yang, Yongxue He, Katherine S. Ziemer, Nian X. Sun, C. Vittoria
Ba-Hexaferrite Films For Next Generation Microwave Devices, Vincent Girard Harris (1962-), Zhaohui Chen, Yajie Chen, Soack Dae Yoon, Tomokuza Sakai, Anton Geiler, Aria Fan Yang, Yongxue He, Katherine S. Ziemer, Nian X. Sun, C. Vittoria
Yajie Chen
Next generation magnetic microwave devices require ferrite films to be thick (>300 μm), self-biased (high remanent magnetization), and low loss in the microwave and millimeter wave bands. Here we examine recent advances in the processing of thick Ba-hexaferrite (M-type) films using pulsed laser deposition (PLD), liquid-phase epitaxy, and screen printing. These techniques are compared and contrasted as to their suitability for microwave materials processing and industrial production. Recent advances include the PLD growth of BaM on wide-band-gap semiconductor substrates and the development of thick, self-biased, low-loss BaM films by screen printing.
Alternating Target Laser Ablation Deposition Of High Quality Barium Hexaferrite Thin Films From Barium Monoferrite And Hematite Targets, A. L. Geiler, S. D. Yoon, Y. Chen, A. Yang, C. N. Chinnasamy, M. Geiler, V. G. Harris, C. Vittoria
Alternating Target Laser Ablation Deposition Of High Quality Barium Hexaferrite Thin Films From Barium Monoferrite And Hematite Targets, A. L. Geiler, S. D. Yoon, Y. Chen, A. Yang, C. N. Chinnasamy, M. Geiler, V. G. Harris, C. Vittoria
Vincent G. Harris
An optimized alternating target laser ablation deposition (ATLAD) technique has been developed to grow high quality barium hexaferrite (BaFe₁₂O₁₉) thin films on basal plane oriented sapphire(Al₂O₃) substrates from barium monoferrite (BaFe₂O₄) and hematite (α-Fe₂O₃) targets. Crystallographic and structural characterization results show that the films possess low c-axis dispersion of Δ ω=0.259 degrees and hexagonal terraced surface morphology. Saturation magnetization and uniaxial magnetic anisotropy field were determined to be consistent with reference data on high quality barium hexaferrite films and bulk single crystals grown by other techniques. Ferromagnetic resonance linewidth of 42 Oe was measured at 52 GHz by the shorted …
Alternating Target Laser Ablation Deposition Of High Quality Barium Hexaferrite Thin Films From Barium Monoferrite And Hematite Targets, A. L. Geiler, S. D. Yoon, Y. Chen, A. Yang, C. N. Chinnasamy, M. Geiler, V. G. Harris, C. Vittoria
Alternating Target Laser Ablation Deposition Of High Quality Barium Hexaferrite Thin Films From Barium Monoferrite And Hematite Targets, A. L. Geiler, S. D. Yoon, Y. Chen, A. Yang, C. N. Chinnasamy, M. Geiler, V. G. Harris, C. Vittoria
Carmine Vittoria
An optimized alternating target laser ablation deposition (ATLAD) technique has been developed to grow high quality barium hexaferrite (BaFe₁₂O₁₉) thin films on basal plane oriented sapphire(Al₂O₃) substrates from barium monoferrite (BaFe₂O₄) and hematite (α-Fe₂O₃) targets. Crystallographic and structural characterization results show that the films possess low c-axis dispersion of Δ ω=0.259 degrees and hexagonal terraced surface morphology. Saturation magnetization and uniaxial magnetic anisotropy field were determined to be consistent with reference data on high quality barium hexaferrite films and bulk single crystals grown by other techniques. Ferromagnetic resonance linewidth of 42 Oe was measured at 52 GHz by the shorted …
Effects Of Boron Addition To The Atomic Structure And Soft Magnetic Properties Of Fecob Films, Aria Yang, Hassan Imrane, Jing Lou, Johnny Kirkland, Carmine Vittoria, Nian Sun, Vincent G. Harris
Effects Of Boron Addition To The Atomic Structure And Soft Magnetic Properties Of Fecob Films, Aria Yang, Hassan Imrane, Jing Lou, Johnny Kirkland, Carmine Vittoria, Nian Sun, Vincent G. Harris
Vincent G. Harris
The magnetic, microwave, and the atomic structure properties of (Fe₀.₇Co₀.₃)1-xBx sputtered films on glass substrates were investigated. The addition of boron induced a decrease in coercivity and ferromagnetic resonance linewidth. The amorphous structure was formed at x ∽0.075. Extended x-ray absorption fine structure (EXAFS) of Fe and Co showed the reduced Fourier transform (FT) amplitude, and increased Debye-Waller factors as x was increased, indicating the increased disorder due to the thermal and structural displacements. Possible Fe-B bonding was observed with a reduced bond length, which indicates boron atoms' preference for staying in the interstitial sites in bcc unit cell.
Effects Of Boron Addition To The Atomic Structure And Soft Magnetic Properties Of Fecob Films, Aria Yang, Hassan Imrane, Jing Lou, Johnny Kirkland, Carmine Vittoria, Nian Sun, Vincent G. Harris
Effects Of Boron Addition To The Atomic Structure And Soft Magnetic Properties Of Fecob Films, Aria Yang, Hassan Imrane, Jing Lou, Johnny Kirkland, Carmine Vittoria, Nian Sun, Vincent G. Harris
Carmine Vittoria
The magnetic, microwave, and the atomic structure properties of (Fe₀.₇Co₀.₃)1-xBx sputtered films on glass substrates were investigated. The addition of boron induced a decrease in coercivity and ferromagnetic resonance linewidth. The amorphous structure was formed at x ∽0.075. Extended x-ray absorption fine structure (EXAFS) of Fe and Co showed the reduced Fourier transform (FT) amplitude, and increased Debye-Waller factors as x was increased, indicating the increased disorder due to the thermal and structural displacements. Possible Fe-B bonding was observed with a reduced bond length, which indicates boron atoms' preference for staying in the interstitial sites in bcc unit cell.
Contact Resistance Study Of Noble Metals And Alloy Films Using A Scanning Probe Microscope Test Station, Lei Chen, H. Lee, Z. J. Guo, Nicol E. Mcgruer, K. W. Gilbert, S. Mall, Kevin D. Leedy, George G. Adams
Contact Resistance Study Of Noble Metals And Alloy Films Using A Scanning Probe Microscope Test Station, Lei Chen, H. Lee, Z. J. Guo, Nicol E. Mcgruer, K. W. Gilbert, S. Mall, Kevin D. Leedy, George G. Adams
George G. Adams
The proper selection of electrical contact materials is one of the critical steps in designing a metal contact microelectromechanical system (MEMS) switch. Ideally, the contact should have both very low contact resistance and high wear resistance. Unfortunately this combination cannot be easily achieved with the contact materials currently used in macroswitches because the available contact force in microswitches is generally insufficient (less than 1 mN) to break through nonconductive surface layers. As a step in the materials selection process, three noble metals, platinum (Pt), rhodium (Rh), ruthenium (Ru), and their alloys with gold (Au) were deposited as thin films on …
Contact Resistance Study Of Noble Metals And Alloy Films Using A Scanning Probe Microscope Test Station, Lei Chen, H. Lee, Z. J. Guo, Nicol E. Mcgruer, K. W. Gilbert, S. Mall, Kevin D. Leedy, George G. Adams
Contact Resistance Study Of Noble Metals And Alloy Films Using A Scanning Probe Microscope Test Station, Lei Chen, H. Lee, Z. J. Guo, Nicol E. Mcgruer, K. W. Gilbert, S. Mall, Kevin D. Leedy, George G. Adams
Nicol E. McGruer
The proper selection of electrical contact materials is one of the critical steps in designing a metal contact microelectromechanical system (MEMS) switch. Ideally, the contact should have both very low contact resistance and high wear resistance. Unfortunately this combination cannot be easily achieved with the contact materials currently used in macroswitches because the available contact force in microswitches is generally insufficient (less than 1 mN) to break through nonconductive surface layers. As a step in the materials selection process, three noble metals, platinum (Pt), rhodium (Rh), ruthenium (Ru), and their alloys with gold (Au) were deposited as thin films on …