Open Access. Powered by Scholars. Published by Universities.®
- File Type
Articles 1 - 3 of 3
Full-Text Articles in Engineering
Single Crystal Fe Films Grown On Ge(001) Substrates By Magnetron Sputtering, J. Lou, A. Daigle, L. Chen, Y. Q. Wu, V. G. Harris, C. Vittoria, N. X. Sun
Single Crystal Fe Films Grown On Ge(001) Substrates By Magnetron Sputtering, J. Lou, A. Daigle, L. Chen, Y. Q. Wu, V. G. Harris, C. Vittoria, N. X. Sun
Nian X. Sun
Single crystal Fe films were grown on Ge (001) substrates by using dc magnetron sputtering. It was found that the microstructures and magnetic properties of Fe films on Ge substrates were strongly dependent upon the substrate temperature during the deposition process. There existed a narrow substrate temperature window of 125 ± 25°C for achieving single crystal Fe film on Ge. Lower substrate temperature led to polycrystalline Fe films due to limited mobility of Fe atoms, while higher substrate temperatures resulted in amorphous Fe-Ge alloy due to severe interdiffusion.
Ba-Hexaferrite Films For Next Generation Microwave Devices, Vincent Harris (1962-), Zhaohui Chen, Yajie Chen, Soack Yoon, Tomokuza Sakai, Anton Geiler, Aria Yang, Yongxue He, Katherine Ziemer, Nian Sun, C. Vittoria
Ba-Hexaferrite Films For Next Generation Microwave Devices, Vincent Harris (1962-), Zhaohui Chen, Yajie Chen, Soack Yoon, Tomokuza Sakai, Anton Geiler, Aria Yang, Yongxue He, Katherine Ziemer, Nian Sun, C. Vittoria
Nian X. Sun
Next generation magnetic microwave devices require ferrite films to be thick (>300 μm), self-biased (high remanent magnetization), and low loss in the microwave and millimeter wave bands. Here we examine recent advances in the processing of thick Ba-hexaferrite (M-type) films using pulsed laser deposition (PLD), liquid-phase epitaxy, and screen printing. These techniques are compared and contrasted as to their suitability for microwave materials processing and industrial production. Recent advances include the PLD growth of BaM on wide-band-gap semiconductor substrates and the development of thick, self-biased, low-loss BaM films by screen printing.
Effects Of Boron Addition To The Atomic Structure And Soft Magnetic Properties Of Fecob Films, Aria Yang, Hassan Imrane, Jing Lou, Johnny Kirkland, Carmine Vittoria, Nian Sun, Vincent G. Harris
Effects Of Boron Addition To The Atomic Structure And Soft Magnetic Properties Of Fecob Films, Aria Yang, Hassan Imrane, Jing Lou, Johnny Kirkland, Carmine Vittoria, Nian Sun, Vincent G. Harris
Nian X. Sun
The magnetic, microwave, and the atomic structure properties of (Fe₀.₇Co₀.₃)1-xBx sputtered films on glass substrates were investigated. The addition of boron induced a decrease in coercivity and ferromagnetic resonance linewidth. The amorphous structure was formed at x ∽0.075. Extended x-ray absorption fine structure (EXAFS) of Fe and Co showed the reduced Fourier transform (FT) amplitude, and increased Debye-Waller factors as x was increased, indicating the increased disorder due to the thermal and structural displacements. Possible Fe-B bonding was observed with a reduced bond length, which indicates boron atoms' preference for staying in the interstitial sites in bcc unit cell.