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Full-Text Articles in Engineering
Ald Of Ferroelectric Hfo2 Thin Films, Casey J. Gonta
Ald Of Ferroelectric Hfo2 Thin Films, Casey J. Gonta
Journal of the Microelectronic Engineering Conference
No abstract provided.
Atomic Layer Of Deposition Of Ferroelectric Hfo2, Casey J. Gonta
Atomic Layer Of Deposition Of Ferroelectric Hfo2, Casey J. Gonta
Journal of the Microelectronic Engineering Conference
No abstract provided.
Atomic Layer Of Deposition Of Ferroelectric Hfo2, Casey J. Gonta
Atomic Layer Of Deposition Of Ferroelectric Hfo2, Casey J. Gonta
Journal of the Microelectronic Engineering Conference
Ferroelectric (FE) materials exhibit spontaneous polarization making them particularly attractive for non-volatile memory and logic applications. Recently, doped hafnium oxide has shown to be ferroelectric in nature expanding its applications to these areas of interest. Ferroelectricity has been reported in atomic layer deposition (ALD) of HfO2 with Al, Y, or Si dopants. Previous work at RIT demonstrated functional ferroelectric field effect transistors (FeFETs) using silicon doped HfO2 (Si:HfO2) as the gate dielectric.
The new addition of a Savannah ALD system at RIT has made deposition of doped HfO2 films possible. Recipes have been developed for deposition of aluminum doped HfO2 …