Engineering Commons^™

Permeability Of Oxygen And Carbon Dioxide Through Pinholes In Barrier Coatings, Petri Johansson, Johanna Lahti, Jorma Vihinen, Jurkka Kuusipalo

Journal of Applied Packaging Research

Abstract

Packaging materials are typically made of multilayer structures combining polymers, metals and inorganic materials. Multilayer structures are selected in order to optimize the thickness and performance in packaging applications. Atomic layer deposited (ALD) aluminium oxide (Al₂O₃) layer provides good barrier properties against oxygen and carbon dioxide gases i.e. permeation of gases through ALD coated polymer films will reduce remarkably. The target was to study the effect of pinholes on the oxygen and carbon dioxide permeability of ALD coated extrusion-coated packaging paper. Pinholes were artificially generated by ultra violet (UV) laser drilling through the polymer layer …

Ald Of Ferroelectric Hfo2 Thin Films, Casey J. Gonta

Journal of the Microelectronic Engineering Conference

No abstract provided.

Atomic Layer Of Deposition Of Ferroelectric Hfo2, Casey J. Gonta

Journal of the Microelectronic Engineering Conference

No abstract provided.

Atomic Layer Of Deposition Of Ferroelectric Hfo2, Casey J. Gonta

Journal of the Microelectronic Engineering Conference

Ferroelectric (FE) materials exhibit spontaneous polarization making them particularly attractive for non-volatile memory and logic applications. Recently, doped hafnium oxide has shown to be ferroelectric in nature expanding its applications to these areas of interest. Ferroelectricity has been reported in atomic layer deposition (ALD) of HfO2 with Al, Y, or Si dopants. Previous work at RIT demonstrated functional ferroelectric field effect transistors (FeFETs) using silicon doped HfO2 (Si:HfO2) as the gate dielectric.

The new addition of a Savannah ALD system at RIT has made deposition of doped HfO2 films possible. Recipes have been developed for deposition of aluminum doped HfO2 …