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Full-Text Articles in Engineering
Electrical Properties Of Ultra Thin Al2o3 And Hfo2 Films As Gate Dielectrics In Mos Technology, Vishal R. Mehta
Electrical Properties Of Ultra Thin Al2o3 And Hfo2 Films As Gate Dielectrics In Mos Technology, Vishal R. Mehta
Theses
The rapidly evolving silicon industry demands devices with high-speed and low power consumption. This has led to aggressive scaling of the dimensions in metal oxide semiconductor field effect transistors (MOSFETs). The channel length has been reduced as a result of this scaling. The industry favorite, SlO2, has reached limitations in the thickness regime of 1-1.5 nm as a gate dielectric. High-κ gate dielectrics such as Al203 and HfO2 and their silicates are some of the materials that may, probably, replace SlO2, as gate dielectric in the next four to five years. …
Crystallographic Structure And Mechanical Properties Of Tantalum Coatings On Steel Deposited By Dc Magnetron Sputtering, Charanjeet Singh Paur
Crystallographic Structure And Mechanical Properties Of Tantalum Coatings On Steel Deposited By Dc Magnetron Sputtering, Charanjeet Singh Paur
Theses
Tantalum metal exhibits excellent erosion and corrosion resistance property. Hence, tantalum coatings are investigated for protection of steel surface exposed to mechanical stresses, high temperature, and corrosive environment. Such conditions exist inside large army gun barrels. The goal of this work was to contribute to the development of technology for tantalum coating of steel, which would replace the presently used electrochemical chromium deposition. A DC magnetron sputtering process was used to deposit tantalum coatings on steel substrates. In sputtering, tantalum is deposited in two phases: ductile, body-centered cubic (bcc) phase (a-phase) and a metastable, brittle tetragonal ß-phase. Only a-phase of …
Formation And Characterization Of N/P Shallow Junctions In Sub-Micron Mosfets, Sridhar Madishetty
Formation And Characterization Of N/P Shallow Junctions In Sub-Micron Mosfets, Sridhar Madishetty
Theses
Semiconductors are the burgeoning industries in today's information age. Silicon based microelectronic devices are shrinking day-by-day in accord with the scaling dimensions reported by the International Technology Roadmap for Semiconductors (ITRS). There have been many semiconductor models and simulation programs constantly keeping pace with the continuously evolving scaling dimensions, process technology, performance and cost. Electrical characterization plays a vital role in determining the electrical properties of materials and device structures. Silicon based Metal Oxide Semiconductor Field Effect Transistor (MOSFET) forms the basis of Complimentary Metal Oxide Semiconductor (CMOS) circuits. Today's aggressive scaling approaches in silicon Integrated Circuit (IC) technology require …
Formation & Characterization Of P/N Shallow Junctions In Sub-Micron Mosfets, Samrat G. Chawda
Formation & Characterization Of P/N Shallow Junctions In Sub-Micron Mosfets, Samrat G. Chawda
Theses
The formation of shallow junctions in the source and drain regions is a major challenge to the continued success of scaling of complementary metal oxide semiconductors (CMOS) circuits. The formation of these device structures requires low-energy ion implantation and rapid thermal annealing (RTA). One of the processes which has been shown to be advantageous is spike annealing, with fast ramping and short dwell time at maximum temperature. This work is a study of the effects of implant energy, implant dose and annealing cycles on the reverse-bias leakage current in the diode junction. The reversebias leakage is the study of junction …