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Formation & Characterization Of P/N Shallow Junctions In Sub-Micron Mosfets, Samrat G. Chawda

Theses

The formation of shallow junctions in the source and drain regions is a major challenge to the continued success of scaling of complementary metal oxide semiconductors (CMOS) circuits. The formation of these device structures requires low-energy ion implantation and rapid thermal annealing (RTA). One of the processes which has been shown to be advantageous is spike annealing, with fast ramping and short dwell time at maximum temperature. This work is a study of the effects of implant energy, implant dose and annealing cycles on the reverse-bias leakage current in the diode junction. The reversebias leakage is the study of junction …