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Electrical Properties Of Ultra Thin Al2o3 And Hfo2 Films As Gate Dielectrics In Mos Technology, Vishal R. Mehta
Electrical Properties Of Ultra Thin Al2o3 And Hfo2 Films As Gate Dielectrics In Mos Technology, Vishal R. Mehta
Theses
The rapidly evolving silicon industry demands devices with high-speed and low power consumption. This has led to aggressive scaling of the dimensions in metal oxide semiconductor field effect transistors (MOSFETs). The channel length has been reduced as a result of this scaling. The industry favorite, SlO2, has reached limitations in the thickness regime of 1-1.5 nm as a gate dielectric. High-κ gate dielectrics such as Al203 and HfO2 and their silicates are some of the materials that may, probably, replace SlO2, as gate dielectric in the next four to five years. …