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Electronic Devices and Semiconductor Manufacturing

Theses/Dissertations

2013

Applied sciences

Articles 1 - 7 of 7

Full-Text Articles in Engineering

Design, Fabrication And Characterization Of Plasmonic Fishnet Structures For The Enhancement Of Absorption In Thin Film Solar Cells, Sayan Seal Dec 2013

Design, Fabrication And Characterization Of Plasmonic Fishnet Structures For The Enhancement Of Absorption In Thin Film Solar Cells, Sayan Seal

Graduate Theses and Dissertations

Incorporating plasmonic structures into the back spacer layer of thin film solar cells (TFSCs) is an efficient way to improve their performance. The fishnet structure; which is a tunable, plasmonic light scatterer is used to enhance light absorption. Unlike other plasmonic particles that have been previously suggested, the fishnet is an electrically connected wire mesh and does not result in electric field localization, hence it results in greater absorption in the intrinsic Si layer. Unlike other designs, the fishnet structure is placed in the back spacer layer of the TFSC, so it does not block any incident light. There is …


Zinc Oxide Nanorod Based Ultraviolet Detectors With Wheatstone Bridge Design, Arun Vasudevan Dec 2013

Zinc Oxide Nanorod Based Ultraviolet Detectors With Wheatstone Bridge Design, Arun Vasudevan

Graduate Theses and Dissertations

This research work, for the first time, investigated metal semiconductor-metal (MSM) zine oxide (ZnO) nanorod based ultra-violet (UV) detectors having a Wheatstone bridge design with a high

responsivity at room temperature and above, as well as a responsivity that was largely independent of the change in ambient conditions. The ZnO nanorods which acted as the sensing element of the detector were grown by a chemical growth technique. Studies were conducted to determine the effects on ZnO nanorod properties by varying the concentration of the chemicals used for the rod growth. These studies showed how the rod diameter and the deposition …


Investigation Of The Effects Of Rapid Thermal Annealing On Mbe Grown Gaasbi/Gaas Heterostructures For Optoelectronic Devices, Perry C. Grant Dec 2013

Investigation Of The Effects Of Rapid Thermal Annealing On Mbe Grown Gaasbi/Gaas Heterostructures For Optoelectronic Devices, Perry C. Grant

Graduate Theses and Dissertations

High efficiency optoelectronic devices rely on high quality materials making up the device structure. The scope of this thesis investigates the effectiveness of rapid thermal annealing (RTA) at improving the material quality of GaAsBi/GaAs heterostructures. During the fabrication of a device, the contacts of the device had the rapid thermal annealing process accomplished to produce ohmic contacts and this research explored if this annealing treatment degraded the quantum wells that made up the active region of a device. To investigate these effects, a system to measure the photoluminescence of the material system was constructed utilizing Fourier Transform Infrared Spectroscopy. The …


Electrical Design Considerations And Packaging Of Power Electronic Modules, Shijie Wang Aug 2013

Electrical Design Considerations And Packaging Of Power Electronic Modules, Shijie Wang

Graduate Theses and Dissertations

A modern power electronic module can save significant energy usage in the power electronic systems by improving their switching efficiencies. One way to improve the efficiency of the power electronic module is to reduce its parasitic circuit elements. The purpose of this thesis is to investigate the mitigation of parasitic circuit elements in power electronic modules. General methods of mitigating parasitic inductances were analyzed by the Q3D Extractor and verified by the time-domain reflectometry (TDR) measurements. In most cases, the TDR measurement results closely matched those predicted by the Q3D Extractor. These methods were applied to design and analyze a …


Design And Fabrication Of Inverter And Rectifier Modules For Indirect Matrix Converter Applications, Saikishore Talakokkula Aug 2013

Design And Fabrication Of Inverter And Rectifier Modules For Indirect Matrix Converter Applications, Saikishore Talakokkula

Graduate Theses and Dissertations

In power converter applications, silicon carbide (SiC) power semiconductor devices are preferred over their silicon counterparts due to many advantages such as wide bandgap, high junction temperatures and low on-state resistance. The SiC devices provide reduced conduction and switching losses. Due to the above mentioned advantages the power conversion efficiency of SiC devices is better compared to that of silicon (Si) devices.

This thesis studies the implementation of 1200V/17A Normally-off SiC JFETs for an indirect matrix converter (IMC) application. A discussion on the parasitic inductance optimization is presented based on the electromagnetic simulation results extracted from the Ansoft Q3D extractor. …


High Voltage Direct Current Energy Transmission Using Modular Multilevel Converters, David Alejandro Guzman Pinzon Aug 2013

High Voltage Direct Current Energy Transmission Using Modular Multilevel Converters, David Alejandro Guzman Pinzon

Graduate Theses and Dissertations

This thesis focus on high voltage direct current (HVdc) energy transmission using modular multilevel converter (MMC) based terminals. It provides a brief comparison between different HVdc technologies, focusing on voltage source converters (HVdc-VSC) with the MMC-based terminal emerging as the topology of choice for ratings less than 1 GW. The controllers for a two-terminal HVdc-link are analyzed and Matlab/SimulinkTM simulation models are presented. The simplified models and full Matlab/SimulinkTM based model are used to select the gains for the MMC controllers. Simulation results carried out on the full model validated the proposed methodologies. A new control technique that …


Device Characterization And Compact Modeling Of The Sige Hbt In Extreme Temperature Environments, Beth Olivia Woods May 2013

Device Characterization And Compact Modeling Of The Sige Hbt In Extreme Temperature Environments, Beth Olivia Woods

Graduate Theses and Dissertations

The silicon germanium heterojunction bipolar transistor, SiGe HBT, has very high frequency response but limited voltage range. Commercial communication applications in wireless and system integration have driven the development of the SiGe HBT. However, the device's excellent electrical performance goes beyond the commercial environment. The SiGe HBT performs exceptionally at low temperatures. The device DC current gain and AC small-signal gain significantly increase in the cryogenic temperature range. Applications at low temperatures with expansive temperature range specifications need an HBT compact model to accurately represent the device's performance.

In this work, a compact model referenced at 300K was developed to …