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Synthesis And Characterization Of Lpcvd Silicon Carbide Thin Films For X-Ray Lithography, Mahalingam Bhaskaran

Theses

Amorphous silicon carbide thin films were fabricated using low pressure chemical deposition method with a single liquid precursor, di tertiary butyl silane. The films were deposited for a temperature range of 500-850°C and at different pressures ranging from 0.05 to 1 torr. The growth rate of the films deposited at constant pressure of 0.2 torr with a flow rate of 60 sccm, was found to follow an Arrehenius Behavior in the temperature range of 600 - 675°C, yielding an activation energy of 32.5 k cal mol^-1 . IR spectroscopic study showed an absorption peak centered at 780 cm^{-1 …}