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Full-Text Articles in Engineering Physics
Impact Of Silicon Ion Irradiation On Aluminum Nitride-Transduced Microelectromechanical Resonators, David D. Lynes, Joshua Young, Eric Lang, Hengky Chandrahalim
Impact Of Silicon Ion Irradiation On Aluminum Nitride-Transduced Microelectromechanical Resonators, David D. Lynes, Joshua Young, Eric Lang, Hengky Chandrahalim
Faculty Publications
Microelectromechanical systems (MEMS) resonators use is widespread, from electronic filters and oscillators to physical sensors such as accelerometers and gyroscopes. These devices' ubiquity, small size, and low power consumption make them ideal for use in systems such as CubeSats, micro aerial vehicles, autonomous underwater vehicles, and micro-robots operating in radiation environments. Radiation's interaction with materials manifests as atomic displacement and ionization, resulting in mechanical and electronic property changes, photocurrents, and charge buildup. This study examines silicon (Si) ion irradiation's interaction with piezoelectrically transduced MEMS resonators. Furthermore, the effect of adding a dielectric silicon oxide (SiO2) thin film is …
Performance Comparison Of Pb(Zr0.52Ti0.48)O3-Only And Pb(Zr0.52Ti0.48)O3-On-Silicon Resonators, Hengky Chandrahalim, Sunil A. Bhave, Ronald G. Polcawich, Jeff Pulskamp, Dan Judy, Roger Kaul, Madan Dubey
Performance Comparison Of Pb(Zr0.52Ti0.48)O3-Only And Pb(Zr0.52Ti0.48)O3-On-Silicon Resonators, Hengky Chandrahalim, Sunil A. Bhave, Ronald G. Polcawich, Jeff Pulskamp, Dan Judy, Roger Kaul, Madan Dubey
Faculty Publications
This paper provides a quantitative comparison and explores the design space of lead zirconium titanate (PZT)–only and PZT-on-silicon length-extensional mode resonators for incorporation into radio frequency microelectromechanical system filters and oscillators. We experimentally measured the correlation of motional impedance (RX) and quality factor (Q) with the resonators’ silicon layer thickness (tSi). For identical lateral dimensions and PZT-layer thicknesses (tPZT), the PZT-on-silicon resonator has higher resonant frequency (fC), higher Q (5100 versus 140), lower RX (51 Ω versus 205 Ω), and better linearity [third-order input intercept …