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Full-Text Articles in Engineering Physics
Reflection-High Energy Electron Diffraction Study Of Si(100) Homoepitaxy By Femtosecond Pulsed Laser Deposition, Mohammed S. Hegazy
Reflection-High Energy Electron Diffraction Study Of Si(100) Homoepitaxy By Femtosecond Pulsed Laser Deposition, Mohammed S. Hegazy
Electrical & Computer Engineering Theses & Dissertations
The dynamics of femtosecond pulsed laser deposition (fsPLD) of Si(!00)-1 x I and Si(!00)-2x I homoepitaxy are studied by in situ reflection high-energy electron diffraction (RHEED) and ex situ atomic force microscopy (AFM). The effects of substrate temperature, laser fluence and the pressure of a passive gas on the Si(!00)-1 x I growth mode are discussed. It is shown that films grow following the Volmer-Weber (3D) growth mode. The substrate temperature largely affects the morphology of the grown film. Below ~ 400 °C (at laser fluence of~ 1.9 J/cm2), randomly oriented 3D clusters are grown. This is shown …
Cuin1-Xalxse2 Thin Films And Solar Cells, P. D. Paulson, M. W. Haimbodi, S. Marsillac, R. W. Birkmire, W. N. Shafarman
Cuin1-Xalxse2 Thin Films And Solar Cells, P. D. Paulson, M. W. Haimbodi, S. Marsillac, R. W. Birkmire, W. N. Shafarman
Electrical & Computer Engineering Faculty Publications
CuIn[sub 1-x]Al[sub x]Se[sub 2] thin films are investigated for their application as the absorber layer material for high efficiency solar cells. Single-phase CuIn[sub 1-x]Al[sub x]Se[sub 2] films were deposited by four source elemental evaporation with a composition range of 0≤x≤0.6. All these films demonstrate a normalized subband gap transmission >85% with 2 µm film thickness. Band gaps obtained from spectroscopic ellipsometry show an increase with the Al content in the CuIn[sub 1-x]Al[sub x]Se[sub 2] film with a bowing parameter of 0.62. The structural properties investigated using x-ray diffraction measurements show a decrease in lattice spacing as the Al content increases. …