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Full-Text Articles in Engineering Physics
Studies Of Initial Growth Of Gan On Inn, Alaa Alnami
Studies Of Initial Growth Of Gan On Inn, Alaa Alnami
Graduate Theses and Dissertations
III-nitride materials have recently attracted much attention for applications in both the microelectronics and optoelectronics. For optoelectronic devices, III-nitride materials with tunable energy band gaps can be used as the active region of devices to enhance the absorption or emission. A such material is indium nitride (InN), which along with gallium nitride (GaN) and aluminum nitride (AlN) embody the very real promise of forming the basis of a broad spectrum, a high efficiency solar cell. One of the remaining complications in incorporating InN into a solar cell design is the effects of the high temperature growth of the GaN crystal …
Reflective Efficiencies Of Materials For Applications Of Bifacial Solar Cells, Michael Metter
Reflective Efficiencies Of Materials For Applications Of Bifacial Solar Cells, Michael Metter
Senior Theses
The bifacial solar cell is superior to its monofacial predecessor due to its ability to convert both incident light on top and reflected light from below into energy. The scattering of the reflected light is affected by the property of the material on which it is interacting. To date, little work has been contributed to studying the properties of these materials to determine optimal quantities for bifacial solar cells. In the first experiment, reflective efficiencies compared to the angle of reflection were explored for different grit of sandpaper in order to develop an understanding of how surface texture impacts reflectivity. …