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Full-Text Articles in Engineering Physics
Photoluminescence Of Beryllium-Related Defects In Gallium Nitride, Mykhailo Vorobiov, Mykhailo Vorobiov
Photoluminescence Of Beryllium-Related Defects In Gallium Nitride, Mykhailo Vorobiov, Mykhailo Vorobiov
Theses and Dissertations
This study explores the potential of beryllium (Be) as an alternative dopant to magnesium (Mg) for achieving higher hole concentrations in gallium nitride (GaN). Despite Mg prominence as an acceptor in optoelectronic and high-power devices, its deep acceptor level at 0.22 eV above the valence band limits its effectiveness. By examining Be, this research aims to pave the way to overcoming these limitations and extend the findings to aluminum nitride and aluminum gallium nitride (AlGaN) alloy. Key contributions of this work include. i)Identification of three Be-related luminescence bands in GaN through photoluminescence spectroscopy, improving the understanding needed for further material …
Photoluminescence Spectra Of Silicon Doped With Cadmium, N A. Sultanov, E T. Rakhimov, Z Mirzajonov, F T. Yusupov
Photoluminescence Spectra Of Silicon Doped With Cadmium, N A. Sultanov, E T. Rakhimov, Z Mirzajonov, F T. Yusupov
Scientific-technical journal
Cadmium and zinc, as transition metals, are deep-level impurities (DL) and have a significant effect on the electrical, photoelectric, recombination, and other properties of semiconductor crystals.This paper presents the results of experimental studies of the optical and electrical properties of silicon crystals containing impurity atoms of cadmium and zinc using DLTS and low-temperature photoluminescence (PL).