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Full-Text Articles in Engineering Physics

Magnetoelectric Memory Cells With Domain-Wall-Mediated Switching, Kirill Belashchenko, Oleg Tchernyshyov, Alexey Kovalev, Dmitri Nikonov Oct 2018

Magnetoelectric Memory Cells With Domain-Wall-Mediated Switching, Kirill Belashchenko, Oleg Tchernyshyov, Alexey Kovalev, Dmitri Nikonov

Kirill Belashchenko Publications

A magnetoelectric memory cell with domain - wall - mediated switching is implemented using a split gate architecture . The split gate architecture allows a domain wall to be trapped within a magnetoelectric antiferromagnetic ( MEAF ) active layer . An extension of this architecture applies to multiple gate linear arrays that can offer advantages in memory density , programmability , and logic functionality . Applying a small anisotropic in - plane shear strain to the MEAF can block domain wall precession to improve reliability and speed of switching


Large T1 Contrast Enhancement Using Superparamagnetic Nanoparticles In Ultra-Low Field Mri, Xiaolu Yin, Stephen E. Russek, Gary Zabow, Fan Sun, Jeotikatan Mohapatra, Kathryn E. Keenan, Michael A. Boss, Hao Zeng, J. Ping Liu, Alexandrea Viert, Sy-Hwang Liou, John Moreland Aug 2018

Large T1 Contrast Enhancement Using Superparamagnetic Nanoparticles In Ultra-Low Field Mri, Xiaolu Yin, Stephen E. Russek, Gary Zabow, Fan Sun, Jeotikatan Mohapatra, Kathryn E. Keenan, Michael A. Boss, Hao Zeng, J. Ping Liu, Alexandrea Viert, Sy-Hwang Liou, John Moreland

Nebraska Center for Materials and Nanoscience: Faculty Publications

Superparamagnetic iron oxide nanoparticles (SPIONs) are widely investigated and utilized as magnetic resonance imaging (MRI) contrast and therapy agents due to their large magnetic moments. Local field inhomogeneities caused by these high magnetic moments are used to generate T2 contrast in clinical high-field MRI, resulting in signal loss (darker contrast). Here we present strong T1 contrast enhancement (brighter contrast) from SPIONs (diameters from 11 nm to 22 nm) as observed in the ultra-low field (ULF) MRI at 0.13 mT. We have achieved a high longitudinal relaxivity for 18 nm SPION solutions, r1 = 615 s−1 mM−1, which is two …


Laser-Induced Recoverable Surface Patterning On Ni50ti50 Shape Memory Alloys, Saidjafarzoda Ilhom Jul 2018

Laser-Induced Recoverable Surface Patterning On Ni50ti50 Shape Memory Alloys, Saidjafarzoda Ilhom

Masters Theses & Specialist Projects

Shape memory alloys (SMAs) are a unique class of smart materials exhibiting extraordinary properties with a wide range of applications in engineering, biomedical, and aerospace technologies. In this study, an advanced, efficient, low-cost, and highly scalable laser-assisted imprinting method with low environmental impact to create thermally controllable surface patterns is reported. Two different imprinting methods were carried out mainly on Ni50Ti50 (at. %) SMAs by using a nanosecond pulsed Nd:YAG laser operating at 1064 nm wavelength and 10 Hz frequency. First, laser pulses at selected fluences were directly focused on the NiTi surface, which generated pressure pulses of up to …


Modeling Recombination In Solar Cells, Paul Chery Jun 2018

Modeling Recombination In Solar Cells, Paul Chery

Macalester Journal of Physics and Astronomy

Solar cells are a competitive alternative to nonrenewable energy sources such as fossil fuels. However, the efficiency of these devices is limited by photogenerated carrier recombination. We use a finite difference numerical model to study recombination phenomena in the absorber layer of solar cells including alternate recombination models and the effects of spatial distribution of recombination centers. We compare the effect of using the constant lifetime approximation for recombination to the full Shockley-Read-Hall expression in Silicon solar cells and find that the constant lifetime approximation holds for high defect densities but not for high photon flux densities. Finally, we simulate …


Measuring The Double Layer Capacitance Of Electrolytes With Varied Concentrations, Geoffrey Rath May 2018

Measuring The Double Layer Capacitance Of Electrolytes With Varied Concentrations, Geoffrey Rath

Senior Theses

When electric potentials are applied from an electrolytic fluid to a metal, a double layer capacitor, Cdl, develops at the interface. The layer directly at the interface is called the Stern layer and has a thickness equal to roughly the size of the ions in the fluid. The next layer, the diffuse layer, arises from the gathering of like charges in the Stern layer. This layer is the distance needed for ionic charges to return to equilibrium. This distance, called the Debye length, λ, depends on the square root of the electrolyte concentration. To study the properties of …


Magnetic Anisotropy And Exchange Bias In L10 Fept/Nio Bilayer Thin Films, Zachary B. Leuty May 2018

Magnetic Anisotropy And Exchange Bias In L10 Fept/Nio Bilayer Thin Films, Zachary B. Leuty

MSU Graduate Theses

Perpendicular exchange bias (PEB), particularly when it persists in nanomaterials to room temperature, is highly useful for applications in spintronic devices and for advancing the development of high-information-density magnetic random access memory. A complete mechanistic and theoretical understanding of exchange bias has evaded scientists. The quest to discover novel materials for magnetic and spintronic device applications has stimulated investigation into nanomaterials having optimal and/or tailored magnetic properties that are based on the exchange bias effect. In this study, pulsed laser deposition was used to grow epitaxial PEB systems of ferromagnetic FePt thin film layers that are interfaced with antiferromagnetic NiO …


Nanostructural Origin Of Semiconductivity And Large Magnetoresistance In Epitaxial Nico2O4/Al2O3 Thin Films, Congmian Zhen, Xiaozhe Zhang, Wengang Wei, Wenzhe Guo, Ankit Pant, Xiaoshan Xu, Jian Shen, Li Ma, Denglu Hou Mar 2018

Nanostructural Origin Of Semiconductivity And Large Magnetoresistance In Epitaxial Nico2O4/Al2O3 Thin Films, Congmian Zhen, Xiaozhe Zhang, Wengang Wei, Wenzhe Guo, Ankit Pant, Xiaoshan Xu, Jian Shen, Li Ma, Denglu Hou

Xiaoshan Xu Papers

Despite low resistivity (~1 mΩ cm), metallic electrical transport has not been commonly observed in inverse spinel NiCo2O4, except in certain epitaxial thin films. Previous studies have stressed the effect of valence mixing and the degree of spinel inversion on the electrical conduction of NiCo2O4 films. In this work, we studied the effect of nanostructural disorder by comparing the NiCo2O4 epitaxial films grown on MgAl2O4 (1 1 1) and on Al2O3 (0 0 1) substrates. Although the optimal growth conditions are similar for the …


Structure And Magnetism Of Mn5ge3 Nanoparticles, Onur Tosun, Mohammed Salehi-Fashami, Balamurugan Balasubramanian, Ralph Skomski, David J. Sellmyer, George C. Hadjipanayis Jan 2018

Structure And Magnetism Of Mn5ge3 Nanoparticles, Onur Tosun, Mohammed Salehi-Fashami, Balamurugan Balasubramanian, Ralph Skomski, David J. Sellmyer, George C. Hadjipanayis

Nebraska Center for Materials and Nanoscience: Faculty Publications

In this work, we investigated the magnetic and structural properties of isolated Mn5Ge3 nanoparticles prepared by the cluster-beam deposition technique. Particles with sizes between 7.2 and 12.6 nm were produced by varying the argon pressure and power in the cluster gun. X-ray diffraction (XRD)and selected area diffraction (SAD) measurements show that the nanoparticles crystallize in the hexagonal Mn5Si3-type crystal structure, which is also the structure of bulk Mn5Ge3. The temperature dependence of the magnetization shows that the as-made particles are ferromagnetic at room temperature and have slightly different Curie …


Magnetism Of New Metastable Cobalt-Nitride Compounds, Balamuruga Balamurugan, Xin Zhao, Shah R. Valloppilly, Sumit Beniwal, Ralph Skomski, Anandakumar Sarella, Yunlong Jin, Xingzhong Li, Xiaoshan Xu, Huibo Cao, Haohan Wang, Axel Enders, Cai-Zhuang Wang, Kai-Ming Ho, David J. Sellmyer Jan 2018

Magnetism Of New Metastable Cobalt-Nitride Compounds, Balamuruga Balamurugan, Xin Zhao, Shah R. Valloppilly, Sumit Beniwal, Ralph Skomski, Anandakumar Sarella, Yunlong Jin, Xingzhong Li, Xiaoshan Xu, Huibo Cao, Haohan Wang, Axel Enders, Cai-Zhuang Wang, Kai-Ming Ho, David J. Sellmyer

Nebraska Center for Materials and Nanoscience: Faculty Publications

The search for new magnetic materials with high magnetization and magnetocrystalline anisotropy is important for a wide range of applications including information and energy processing. There is only a limited number of naturally occurring magnetic compounds that are suitable. This situation stimulates an exploration of new phases that occur far from thermal-equilibrium conditions, but their stabilization is generally inhibited due to high positive formation energies. Here a nanocluster-deposition method has enabled the discovery of a set of new non-equilibrium Co-N intermetallic compounds. The experimental search was assisted by computational methods including adaptive-genetic-algorithm and electronic- structure calculations. Conventional wisdom is that …


Structural, Magnetic, And Electron-Transport Properties Of Epitaxial Mn2Ptsn Films, Y. Jin, Shah R. Valloppilly, Parashu Kharel, Jace Waybright, Pavel V. Lukashev, Xingzhong Li, David J. Sellmyer Jan 2018

Structural, Magnetic, And Electron-Transport Properties Of Epitaxial Mn2Ptsn Films, Y. Jin, Shah R. Valloppilly, Parashu Kharel, Jace Waybright, Pavel V. Lukashev, Xingzhong Li, David J. Sellmyer

Nebraska Center for Materials and Nanoscience: Faculty Publications

The growth of new magnetic materials on suitable insulating substrates is an important part of the development of spin-electronics devices for memory or information processing. Epitaxial thin films of Mn2PtSn were grown on a MgO [001] substrate by magnetron co-sputtering of the constituents. Structural, magnetic, and electron-transport properties were investigated. The epitaxial Mn2PtSn film has an inverse tetragonal structure with the c-axis aligned in the plane of the MgO substrate. The lattice constants determined using XRD and TEM analysis are c=6.124Å and a=b=4.505Å. The orientation of Mn2PtSn c-axis which …


Honeycomb Lattice Na2iro3 At High Pressures: A Robust Spin-Orbit Mott Insulator, Xiaoxiang Xi, Xiangyan Bo, X. S. Xu, P. P. Kong, Z. Liu, X. G. Hong, C. Q. Jin, G. Cao, Xiangang Wan, G. L. Carr Jan 2018

Honeycomb Lattice Na2iro3 At High Pressures: A Robust Spin-Orbit Mott Insulator, Xiaoxiang Xi, Xiangyan Bo, X. S. Xu, P. P. Kong, Z. Liu, X. G. Hong, C. Q. Jin, G. Cao, Xiangang Wan, G. L. Carr

Xiaoshan Xu Papers

The honeycomb iridate Na2IrO3 has received much attention as a candidate to realize a quantum spin liquid state, but the nature of its insulating state remains controversial. We found that the material exhibits structural transitions at 3 and 10 GPa. The former is accompanied by 166-meV suppression of the activation gap, but the energies for the low-lying interband transitions change by less than 10 meV. This can be reconciled in a picture in which the application of high pressure barely shifts the electronic bands, but rather merely broadens them. First-principles calculations uncover a strong correlation between the …


Tuning The Neel Temperature Of Hexagonal Ferrites By Structural Distortion, Kishan Sinha, Haohan Wang, Xiao Wang, Liying Zhou, Yuewei Yin, Wenbin Wang, Xuemei Cheng, David J. Keavney, Huibo Cao, Yaohua Liu, Xifan Wu, Xiaoshan Xu Jan 2018

Tuning The Neel Temperature Of Hexagonal Ferrites By Structural Distortion, Kishan Sinha, Haohan Wang, Xiao Wang, Liying Zhou, Yuewei Yin, Wenbin Wang, Xuemei Cheng, David J. Keavney, Huibo Cao, Yaohua Liu, Xifan Wu, Xiaoshan Xu

Xiaoshan Xu Papers

To tune the magnetic properties of hexagonal ferrites, a family of magnetoelectric multiferroic materials, by atomic-scale structural engineering, we studied the effect of structural distortion on the magnetic ordering temperature (TN) in these materials. Using the symmetry analysis, we show that unlike most antiferromagnetic rare-earth transition-metal perovskites, a larger structural distortion leads to a higher TN in hexagonal ferrites and manganites, because the K3 structural distortion induces the three-dimensional magnetic ordering, which is forbidden in the undistorted structure by symmetry. We also revealed a nearlinear relation between TN and the tolerance factor and a …


Saw Assisted Domain Wall Motion In Co/Pt Multilayers, Westin Edrington, Uday Singh, Maya Abo Dominguez, James Rehwaldt Alexander, Rabindra Nepal, Shireen Adenwalla Jan 2018

Saw Assisted Domain Wall Motion In Co/Pt Multilayers, Westin Edrington, Uday Singh, Maya Abo Dominguez, James Rehwaldt Alexander, Rabindra Nepal, Shireen Adenwalla

Shireen Adenwalla Papers

The motion of domain walls in thin ferromagnetic films is of both fundamental and technological interest. In particular, the ability to use drivers other than magnetic fields to control the positions of domain walls could be exciting for memory applications. Here, we show that high frequency dynamic strain produced by surface acoustic waves is an efficient driver of magnetic domain walls in ferromagnetic films with perpendicular anisotropy. A standing surface acoustic wave of resonant frequency 96.6MHz increases the domain wall velocities in thin films of [Co/Pt]n by an order of magnitude compared to magnetic fields alone. This effect is highly …


Towards A Strong Spin–Orbit Coupling Magnetoelectric Transistor, Peter Dowben, Christian Binek, Kai Zhang, Lu Wang, Wai-Ning Mei, Jonathan P. Bird, Uttam Singisetti, Xia Hong, Kang L. Wang, Dmitri Nikonov Jan 2018

Towards A Strong Spin–Orbit Coupling Magnetoelectric Transistor, Peter Dowben, Christian Binek, Kai Zhang, Lu Wang, Wai-Ning Mei, Jonathan P. Bird, Uttam Singisetti, Xia Hong, Kang L. Wang, Dmitri Nikonov

Peter Dowben Publications

Here, we outline magnetoelectric (ME) device concepts based on the voltage control of the interface magnetism of an ME antiferromagnet gate dielectric formed on a very thin semiconductor channel with large spin–orbit coupling (SOC). The emphasis of the ME spin field-effect transistors (ME spin FET) is on an antiferromagnet spin–orbit read logic device and a ME spin-FET multiplexer. Both spin-FET schemes exploit the strong SOC in the semiconducting channel materials but remain dependent on the voltage-induced switching of an ME, so that the switching time is limited only by the switching dynamics of the ME. The induced exchange field spin …


A Brief Review Of Ferroelectric Control Of Magnetoresistance In Organic Spin Valves, Xiaoshan Xu Jan 2018

A Brief Review Of Ferroelectric Control Of Magnetoresistance In Organic Spin Valves, Xiaoshan Xu

Xiaoshan Xu Papers

Magnetoelectric coupling has been a trending research topic in both organic and inorganic materials and hybrids. The concept of controlling magnetism using an electric field is particularly appealing in energy efficient applications. In this spirit, ferroelectricity has been introduced to organic spin valves to manipulate the magneto transport, where the spin transport through the ferromagnet/organic spacer interfaces (spinterface) are under intensive study. The ferroelectric materials in the organic spin valves provide a knob to vary the interfacial energy alignment and the interfacial crystal structures, both are critical for the spin transport. In this review, we introduce the recent efforts of …