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Biological and Chemical Physics Commons™
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Articles 1 - 2 of 2
Full-Text Articles in Biological and Chemical Physics
Enhanced Nucleate Boiling On Horizontal Hydrophobic-Hydrophilic Carbon Nanotube Coatings, Xianming Dai, Xinyu Huang, Fanghao Yang, Xiaodong Li, Joshua Sightler, Yingchao Yang, Chen Li
Enhanced Nucleate Boiling On Horizontal Hydrophobic-Hydrophilic Carbon Nanotube Coatings, Xianming Dai, Xinyu Huang, Fanghao Yang, Xiaodong Li, Joshua Sightler, Yingchao Yang, Chen Li
Faculty Publications
Ideal hydrophobic-hydrophilic composite cavities are highly desired to enhance nucleate boiling. However, it is challenging and costly to fabricate these types of cavities by conventional micro/nano fabrication techniques. In this study, a type of hydrophobic-hydrophilic composite interfaces were synthesized from functionalized multiwall carbon nanotubes by introducing hydrophilic functional groups on the pristine multiwall carbon nanotubes. This type of carbon nanotube enabled hydrophobic-hydrophilic composite interfaces were systematically characterized. Ideal cavities created by the interfaces were experimentally demonstrated to be the primary reason to substantially enhance nucleate boiling
Growth And Transport Properties Of Complementary Germanium Nanowire Field Effect Transistors, Andrew B. Greytak, Lincoln J. Lauhon, Mark S. Gudiksen, Charles M. Lieber
Growth And Transport Properties Of Complementary Germanium Nanowire Field Effect Transistors, Andrew B. Greytak, Lincoln J. Lauhon, Mark S. Gudiksen, Charles M. Lieber
Faculty Publications
n- and p-type Ge nanowires were synthesized by a multistep process in which axial elongation, via vapor–liquid–solid (VLS) growth, and doping were accomplished in separate chemical vapor deposition steps. Intrinsic, single-crystal, Ge nanowires prepared by Au nanocluster-mediated VLS growth were surface-doped in situ using diborane or phosphine, and then radial growth of an epitaxial Ge shell was used to cap the dopant layer. Field-effect transistors prepared from these Ge nanowires exhibited on currents and transconductances up to 850 µA/µm and 4.9 µA/V, respectively, with device yields of >85%.