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Mesostructure Of Photoluminescent Porous Silicon, David D. Allred, F. Ruiz, C. Vázquez-López, Jesus González-Hernández, G. Romero-Paredes, R. Peña-Sierra, G. Torres-Delgado
Mesostructure Of Photoluminescent Porous Silicon, David D. Allred, F. Ruiz, C. Vázquez-López, Jesus González-Hernández, G. Romero-Paredes, R. Peña-Sierra, G. Torres-Delgado
Faculty Publications
Scanning electron microscopy, atomic force microscopy, and Raman spectroscopy were used to characterize the microstructure of photoluminescent porous silicon (PS) layers formed by the anodic etching (HF:H2O:ethanol), at various current densities, of p-type (100) silicon wafers possessing resitivity in the range 1-2 Ω cm. Existing models for the origin of luminescence in PS are not supported by our observations. Cross-sectional as well as surface atomic force micrographs show the material to be clumpy rather than columnar; rodlike structures are not observed down to a scale of 40 nm. A three-dimensional model of the mesostructure of porous silicon is discussed. Room-temperature …