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Full-Text Articles in Physics

In Situ And Ex Situ Studies Of Molybdenum Thin Films Deposited By Rf And Dc Magnetron Sputtering As A Back Contact For Cigs Solar Cells, K. P. Aryal, H. Khatri, R. W. Collins, S. Marsillac Jan 2012

In Situ And Ex Situ Studies Of Molybdenum Thin Films Deposited By Rf And Dc Magnetron Sputtering As A Back Contact For Cigs Solar Cells, K. P. Aryal, H. Khatri, R. W. Collins, S. Marsillac

Electrical & Computer Engineering Faculty Publications

Molybdenum thin films were deposited by rf and dc magnetron sputtering and their properties analyzed with regards to their potential application as a back contact for CIGS solar cells. It is shown that both types of films tend to transition from tensile to compressive strain when the deposition pressure increases, while the conductivity and the grain size decreas. The nucleation of the films characterized by in situ and real time spectroscopic ellipsometry shows that both films follow a Volmer-Weber growth, with a higher surface roughness and lower deposition rate for the rf deposited films. The electronic relaxation time was then …


Optical Detection Of Melting Point Depression For Silver Nanoparticles Via In Situ Real Time Spectroscopic Ellipsometry, S. A. Little, T. Begou, R. W. Collins, S. Marsillac Jan 2012

Optical Detection Of Melting Point Depression For Silver Nanoparticles Via In Situ Real Time Spectroscopic Ellipsometry, S. A. Little, T. Begou, R. W. Collins, S. Marsillac

Electrical & Computer Engineering Faculty Publications

Silver nanoparticle films were deposited by sputtering at room temperature and were annealed while monitoring by real time spectroscopic ellipsometry (SE). The nanoparticle dielectric functions (0.75 eV-6.5 eV) obtained by SE were modeled using Lorentz and generalized oscillators for the nanoparticle plasmon polariton (NPP) and interband transitions, respectively. The nanoparticle melting point could be identified from variations in the oscillator parameters during annealing, and this identification was further confirmed after cooling through significant, irreversible changes in these parameters relative to the as-deposited film. The variation in melting point with physical thickness, and thus average nanoparticle diameter, as measured by SE …


Growth Analysis Of (Ag,Cu)Inse2 Thin Films Via Real Time Spectroscopic Ellipsometry, S. A. Little, V. Ranjan, R. W. Collins, S. Marsillac Jan 2012

Growth Analysis Of (Ag,Cu)Inse2 Thin Films Via Real Time Spectroscopic Ellipsometry, S. A. Little, V. Ranjan, R. W. Collins, S. Marsillac

Electrical & Computer Engineering Faculty Publications

In situ and ex situ characterization methods have been applied to investigate the properties of (Ag,Cu)InSe2 (ACIS) thin films. Data acquired from real time spectroscopic ellipsometry (RTSE) experiments were analyzed to extract the evolution of the nucleating, bulk, and surface roughness layer thicknesses. The evolution of these layer thicknesses suggests a transition from Volmer-Weber to Stranski-Krastanov type behavior when Cu is replaced by Ag. The complex dielectric functions of ACIS at both deposition and room temperature as a function of film composition were also extracted from the RTSE data, enabling parameterization of the alloy optical properties.