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Articles 1 - 4 of 4
Full-Text Articles in Physics
Super-Resolution Imaging Using A Three-Dimensional Metamaterials Nanolens, B. Casse, W. Lu, Y. Huang, E. Gultepe, L. Menon, S. Sridhar
Super-Resolution Imaging Using A Three-Dimensional Metamaterials Nanolens, B. Casse, W. Lu, Y. Huang, E. Gultepe, L. Menon, S. Sridhar
Srinivas Sridhar
Super-resolution imaging beyond Abbe's diffraction limit can be achieved by utilizing an optical medium or "metamaterial" that can either amplify or transport the decaying near-field evanescent waves that carry subwavelength features of objects. Earlier approaches at optical frequencies mostly utilized the amplification of evanescent waves in thin metallic films or metal-dielectric multilayers, but were restricted to very small thicknesses (⪡λ, wavelength) and accordingly short object-image distances, due to losses in the material. Here, we present an experimental demonstration of super-resolution imaging by a low-loss three-dimensional metamaterial nanolens consisting of aligned gold nanowires embedded in a porous alumina matrix. This composite …
Adaptive Circuits Using Pfet Floating-Gate Devices, Paul Hasler, Bradley Minch, Chris Diorio
Adaptive Circuits Using Pfet Floating-Gate Devices, Paul Hasler, Bradley Minch, Chris Diorio
Bradley Minch
In this paper, we describe our floating-gate pFET device, with its many circuit applications and supporting experimental measurements. We developed these devices in standard double-poly CMOS technologies by utilizing many effects inherent in these processes. We add floating-gate charge by electron tunneling, and we remove floating-gate charge by hot-electron injection. With this floating-gate technology, we cannot only build analog EEPROMs, we can also implement adaptation and learning when we consider floating-gate devices to be circuit elements with important time-domain dynamics. We start by discussing non-adaptive properties of floating-gate devices and we present two representative non-adaptive applications. First, we discuss using …
A Long-Channel Model For The Asymmetric Double-Gate Mosfet Valid In All Regions Of Operation, Abhishek Kammula, Bradley Minch
A Long-Channel Model For The Asymmetric Double-Gate Mosfet Valid In All Regions Of Operation, Abhishek Kammula, Bradley Minch
Bradley Minch
We present a physically based, continuous analytical model for long-channel double-gate MOSFETs. The model is particularly well suited for implementation in circuit simulators due to the simple expressions for the current andthe continuous nature of the derivatives of the current which improves convergence behavior.
Bistability In A Simple Fluid Network Due To Viscosity Contrast, John Geddes, Brian Storey, David Gardner, Russell Carr
Bistability In A Simple Fluid Network Due To Viscosity Contrast, John Geddes, Brian Storey, David Gardner, Russell Carr
Brian Storey
We study the existence of multiple equilibrium states in a simple fluid network using Newtonian fluids and laminar flow. We demonstrate theoretically the presence of hysteresis and bistability, and we confirm these predictions in an experiment using two miscible fluids of different viscosity—sucrose solution and water. Possible applications include blood flow, microfluidics, and other network flows governed by similar principles.