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1992

Etching

Articles 1 - 2 of 2

Full-Text Articles in Physics

X-Ray Diode Using A Silicon Field Emission Photocathode, W. I. Karian, Larry V. Knight, David D. Allred, A. Reyes-Mena Jan 1992

X-Ray Diode Using A Silicon Field Emission Photocathode, W. I. Karian, Larry V. Knight, David D. Allred, A. Reyes-Mena

Faculty Publications

We have produced arrays of 10,000 sharp p-type silicon points using an etch plus oxidation method. The points were used as electron emitters. No high vacuum cesiation or high temperature cleaning was needed to observe the electron emission. These are seen to be photosensitive sources of electrons at 200 K and 300 K. They were also used to produce AlKα x-rays. This constitutes the first use of etched, point arrays for generating electrons for x-ray sources.


Manufacturing Of Atomically Sharp Silicon Tips And Their Use As Photocathodes, W. I. Karian, Larry V. Knight, David D. Allred, A. Reyes-Mena Jan 1992

Manufacturing Of Atomically Sharp Silicon Tips And Their Use As Photocathodes, W. I. Karian, Larry V. Knight, David D. Allred, A. Reyes-Mena

Faculty Publications

The discovery and understanding of the photoelectric effect led to the study of photoemissive materials fall into two major categories: classical photoemitters and negative-electron-affinity (NEA) materials. Classical photoemitters usually involve an alkali metal, a group-V element such as phosphorus, silver, and/or oxygen. An example is the Ag-O-Cs (S1) photoemitter. NEA photocathodes consist of a photoconductive single crystal semiconductor covered with a thin layer of cesium and oxygen. This layer lowers the work function of the photocathode. A dipole layer is formed at the surface, and band bending occurs. This lowers the effective work function. An example is the GaAs(CsO) photocathode …