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Full-Text Articles in Physics
Dc Pulsed Atmospheric Pressure Plasma Jet Image Information, Denis P. Dowling, F T. O'Neill, Vladimir Milosavljevic, Victor J. Law
Dc Pulsed Atmospheric Pressure Plasma Jet Image Information, Denis P. Dowling, F T. O'Neill, Vladimir Milosavljevic, Victor J. Law
Articles
This paper presents optical imaging and optical emission spectroscopy (OES) data of an atmospheric-pressure plasma jet. It is shown how the visual information and OES information of the air discharge are related as the blown arc extends from the nozzle (2-4 mm) with a molecular nitrogen rotational temperature on the order of 1700 K and the flowing afterglow beyond this region is dominated by the cooler (300-K) NO-O chemiluminescent reaction that produces NO2 species.
Raman Scattering Analysis Of Silicon Dioxide Single Crystal Treated By Direct Current Plasma Discharge, Dusan M. Poparic, Vladimir Milosavljevic, Andrijana Zekic, N Romcevic, Steven Daniels
Raman Scattering Analysis Of Silicon Dioxide Single Crystal Treated By Direct Current Plasma Discharge, Dusan M. Poparic, Vladimir Milosavljevic, Andrijana Zekic, N Romcevic, Steven Daniels
Articles
Low-k materials such as silicon dioxide (SiO2) play an important role in the semiconductor industry. Plasma has become indispensable for advanced materials processing. In this work a treatment of SiO2single crystal by direct current plasma discharge is studied in detail. Offline metrology is conducted for silicon dioxide wafers by Raman scattering, energy-dispersive x-ray spectroscopy, and ellipsometry. Broad Raman peak at around 2800 cm−1 is observed for the treatedSiO2 wafers. Effects of plasma treatment on position of this peak are reported in the paper. An analysis of this correlation could be a framework for creating virtual etch rate sensors, which might …