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Turkish Journal of Physics

2019

AlGaAs/InGaAs/GaAs

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Emission Processes Of The Interaction Between The Quantum Well And Donor Delta Layer In Heterostructures For Phemts, Yana Ivanova, George Yakovlev, Vasily Zubkov, Anna Solomnikova Jan 2019

Emission Processes Of The Interaction Between The Quantum Well And Donor Delta Layer In Heterostructures For Phemts, Yana Ivanova, George Yakovlev, Vasily Zubkov, Anna Solomnikova

Turkish Journal of Physics

We present experimental and theoretical investigations of pHEMT heterostructures with AlGaAs/InGaAs/GaAs quantum wells (QWs) and/or a delta-doped layer, which can be used as active regions in transistors operating in the 4-18 GHz frequency range. Using the electrochemical capacitance-voltage setup ECV Pro we, for the first time, experimentally observed a concentration peak from the near-surface delta layer of the pHEMT structure together with a peak of QW enrichment. The capacitance of the electrolyte-semiconductor contact was measured by Agilent LCR-meter, which was connected to the electrochemical cell of ECV Pro through a specially designed relay module. Using numerical simulation of the electronic …