Physics Commons^™

Structure Analysis Of Sn Bilayer Films On Si (111), Weisong Tu

Masters Theses

Chemical doping is a well-established method for controlling the electronic properties of bulk semiconductors and, e.g, complex oxide materials. In this process, dopant atoms are located at substitutional lattice locations, from where they introduce free charge carriers to the host material. These carriers greatly improve the electrical conductivity of the host material and can even induce an insulator-metal transition at high doping levels. Dopants, however, also introduce scattering centers that are detrimental to conductivity, especially in low-dimensional systems such as nanowires and ultrathin films. These problems can be overcome by using a modulation doping approach in which the dopant atoms …