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Controllable Growth Of Vertically Aligned Graphene On C-Face Sic, Yu Liu, Lianlian Chen, Hilliard Hilliard, Qing-Song Huang, Fang Liu, Mao Wang, Roman Böttger, René Hübner, Alpha T. N’Diaye, Elke Arenholz Elke Arenholz, Viton Heera Viton Heera, Wolfgang Skorupa Wolfgang Skorupa, Shengqiang Zhou
Controllable Growth Of Vertically Aligned Graphene On C-Face Sic, Yu Liu, Lianlian Chen, Hilliard Hilliard, Qing-Song Huang, Fang Liu, Mao Wang, Roman Böttger, René Hübner, Alpha T. N’Diaye, Elke Arenholz Elke Arenholz, Viton Heera Viton Heera, Wolfgang Skorupa Wolfgang Skorupa, Shengqiang Zhou
Articles
We investigated how to control the growth of vertically aligned graphene on C-face SiC by varying the processing conditions. It is found that, the growth rate scales with the annealing temperature and the graphene height is proportional to the annealing time. Temperature gradient and crystalline quality of the SiC substrates influence their vaporization. The partial vapor pressure is crucial as it can interfere with further vaporization. A growth mechanism is proposed in terms of physical vapor transport. The monolayer character of vertically aligned graphene is verified by Raman and X-ray absorption spectroscopy. With the processed samples, d0 magnetism is realized …