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Performance Characteristics Of Nanocrystalline Diamond Vacuum Field Emission Transistor Array, S Hsu, W Kang, J Davidson, J Huang, David Kerns
Performance Characteristics Of Nanocrystalline Diamond Vacuum Field Emission Transistor Array, S Hsu, W Kang, J Davidson, J Huang, David Kerns
David V. Kerns
Nitrogen-incorporated nanocrystalline diamond (ND) vacuum field emission transistor (VFET) with self-aligned gate is fabricated by mold transfer microfabrication technique in conjunction with chemical vapor deposition (CVD) of nanocrystalline diamond on emitter cavity patterned on silicon-on-insulator (SOI) substrate. The fabricated ND-VFET demonstrates gate-controlled emission current with good signal amplification characteristics. The dc characteristics of the ND-VFET show well-defined cutoff, linear, and saturation regions with low gate turn-on voltage, high anode current, negligible gate intercepted current, and large dc voltage gain. The ac performance of the ND-VFET is measured, and the experimental data are analyzed using a modified small signal circuit model. …