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Full-Text Articles in Physics

Stiffness Of Measurement System And Significant Figures Of Displacement Which Are Required To Interpret Adhesional Force Curves, Nancy Burnham, Kunio Takahashi, Hubert Pollock, Tadao Onzawa Feb 1997

Stiffness Of Measurement System And Significant Figures Of Displacement Which Are Required To Interpret Adhesional Force Curves, Nancy Burnham, Kunio Takahashi, Hubert Pollock, Tadao Onzawa

Nancy A. Burnham

Force curves obtained from an elastic contact theory are shown and compared with experimental results. In the elastic contact theory, a pin-on-disk contact is assumed and the following interaction are taken into consideration; (i) elastic deformation, (ii) the specific energy of adhesion in the area of the contact, which is expressed as the difference between the surface energies and the interface energy, (iii) the long-range interaction outside the area of contact, assuming the additivity of the Lennard-Jones type potential, and (iv) another elastic term for the measurement system such as the cantilever stiffness of an atomic force microscope (AFM). In …


Synthesis Of Bulk, Polycrystalline Gallium Nitride At Low Pressures, Alberto Argoitia, John Angus, Cliff Hayman, Long Wang, Jeffrey Dyck, Kathleen Kash Dec 1996

Synthesis Of Bulk, Polycrystalline Gallium Nitride At Low Pressures, Alberto Argoitia, John Angus, Cliff Hayman, Long Wang, Jeffrey Dyck, Kathleen Kash

Jeffrey Dyck

Bulk, polycrytalline gallium nitride was crystallized from gallium saturated with nitrogen obtained from a microwave electron cyclotron resonance source. The polycrystalline samples are wurtzitic and n-type. Well-faceted crystals give near-band-edge and yellow band photo-luminescence at both 10K and 300K. The results show that atomic nitrogen is an attractive alternative to high pressure molecular nitrogen for saturation of gallium with nitrogen for synthesis of bulk gallium nitride.


Growth Of Bulk, Polycrystalline Gallium And Indium Nitride At Sub-Atmospheric Pressures, John Angus, Alberto Argoitia, Cliff Hayman, Long Wang, Jeffrey Dyck, Kathleen Kash Dec 1996

Growth Of Bulk, Polycrystalline Gallium And Indium Nitride At Sub-Atmospheric Pressures, John Angus, Alberto Argoitia, Cliff Hayman, Long Wang, Jeffrey Dyck, Kathleen Kash

Jeffrey Dyck

Bulk polycrystalline gallium nitride and indium nitride were crystallized at sub-atmospheric pressures by saturating the pure metals with nitrogen from a microwave electron cyclotron resonance source. Saturation of Ga/In melts with nitrogen led only to the crystallization of gallium nitride. The polycrystralline samples were wurtzitic. The gallium nitride was well faceted, with narrow Raman lineshapes, and showed near-band-edge and yellow band photo-luminescence at both 4K and 300K. The indium nitirde was formed in smaller amounts, was less well faceted, and showed no photoluminescence.


The Linear Potential Propagator, Br Holstein Dec 1996

The Linear Potential Propagator, Br Holstein

Barry R Holstein

The Feynman propagator for the case of a linear potential is evaluated by a variety of means.