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Full-Text Articles in Physics
Synthesis, Crystal Structure And Thermoelectric Properties Of Β-K2bi8se13 Solid Solutions, Theodora Kyratsi, Duck-Young Chung, Jeff Dyck, Ctirad Uher, Sangeeta Lal, Sim Loo, Tim Hogan, John Ireland, Carl Kannewurf, Evripides Hatzikraniotis, Konstantinos Paraskevopoulos, Mercouri Kanatzidis
Synthesis, Crystal Structure And Thermoelectric Properties Of Β-K2bi8se13 Solid Solutions, Theodora Kyratsi, Duck-Young Chung, Jeff Dyck, Ctirad Uher, Sangeeta Lal, Sim Loo, Tim Hogan, John Ireland, Carl Kannewurf, Evripides Hatzikraniotis, Konstantinos Paraskevopoulos, Mercouri Kanatzidis
Jeffrey Dyck
Solid solution series of the type K2Bi8-xSbxSe13, K2-xRbxBi8Se13 as well as K2Bi8Se13-xSx were prepared and the distribution of the atoms (Bi/Sb, K/Rb and Se/S) on different crystallographic sites, the band gaps and their thermoelectric properties were studied. The distribution Se/S appears to be more uniform than the distribution of the Sb and Rb atoms in the β-K2Bi8Se13 structure that shows preference in specific sites in the lattice. Band gap is mainly affected by Sb and S substitution. Seebeck coefficient measurements showed n-type character for of all Se/S members. In the Bi/Sb series an enhancement of p-type character was observed. The …
Growth Of Oriented Thick Films Of Gallium Nitride From The Melt., Jeffrey Dyck, K. Kash, M. Grossner, C. Hayman, A. Argoitia, N. Yang, M.-H. Hong, M. Kordesch, J. Angus
Growth Of Oriented Thick Films Of Gallium Nitride From The Melt., Jeffrey Dyck, K. Kash, M. Grossner, C. Hayman, A. Argoitia, N. Yang, M.-H. Hong, M. Kordesch, J. Angus
Jeffrey Dyck
While significant strides have been made in the optimization of GaN-based devices on foreign substrates, a more attractive alternative would be homoepitaxy on GaN substrates. The primary motivation of this work is to explore the growth of thick films of GaN from the melt for the ultimate use as substrate material. We have previously demonstrated the synthesis of polycrystalline, wurtzitic gallium nitride and indium nitride by saturating gallium metal and indium metal with atomic nitrogen from a microwave plasma source. Plasma synthesis avoids the high equilibrium pressures required when molecular nitrogen is used as the nitrogen source. Here we report …
Characteriation Of Bulk, Polycrystalline Indium Nitride Grown Of Subatmospheric Pressures, Jeffrey Dyck, Kathleen Kash, Kwieseon Kim, Walter Lambrecht, Cliff Hayman, Alberto Argoitia, Michael Grossner, Willie Zhou, John Angus
Characteriation Of Bulk, Polycrystalline Indium Nitride Grown Of Subatmospheric Pressures, Jeffrey Dyck, Kathleen Kash, Kwieseon Kim, Walter Lambrecht, Cliff Hayman, Alberto Argoitia, Michael Grossner, Willie Zhou, John Angus
Jeffrey Dyck
Polycrystalline, wurtzitic indium nitride was synthesized by saturating indium metal with atomic nitrogen from a microwave plasma source. Plasma synthesis avoids the high equilibrium pressures required when molecular nitrogen is used as the nitrogen source. Two types of growth were observed: 1) small amounts of indium nitride crystallized from the melt during cooling and 2) hexagonal platelets formed adjacent to the In metal source on the crucible sides. The mechanism of this latter growth is not established, but may involve transport of indium as a liquid film. The crystals were characterized by electron diffraction, X-ray diffraction, elemental analysis, scanning electron …
Synthesis Of Bulk, Polycrystalline Gallium Nitride At Low Pressures, Alberto Argoitia, John Angus, Cliff Hayman, Long Wang, Jeffrey Dyck, Kathleen Kash
Synthesis Of Bulk, Polycrystalline Gallium Nitride At Low Pressures, Alberto Argoitia, John Angus, Cliff Hayman, Long Wang, Jeffrey Dyck, Kathleen Kash
Jeffrey Dyck
Bulk, polycrytalline gallium nitride was crystallized from gallium saturated with nitrogen obtained from a microwave electron cyclotron resonance source. The polycrystalline samples are wurtzitic and n-type. Well-faceted crystals give near-band-edge and yellow band photo-luminescence at both 10K and 300K. The results show that atomic nitrogen is an attractive alternative to high pressure molecular nitrogen for saturation of gallium with nitrogen for synthesis of bulk gallium nitride.
Growth Of Bulk, Polycrystalline Gallium And Indium Nitride At Sub-Atmospheric Pressures, John Angus, Alberto Argoitia, Cliff Hayman, Long Wang, Jeffrey Dyck, Kathleen Kash
Growth Of Bulk, Polycrystalline Gallium And Indium Nitride At Sub-Atmospheric Pressures, John Angus, Alberto Argoitia, Cliff Hayman, Long Wang, Jeffrey Dyck, Kathleen Kash
Jeffrey Dyck
Bulk polycrystalline gallium nitride and indium nitride were crystallized at sub-atmospheric pressures by saturating the pure metals with nitrogen from a microwave electron cyclotron resonance source. Saturation of Ga/In melts with nitrogen led only to the crystallization of gallium nitride. The polycrystralline samples were wurtzitic. The gallium nitride was well faceted, with narrow Raman lineshapes, and showed near-band-edge and yellow band photo-luminescence at both 4K and 300K. The indium nitirde was formed in smaller amounts, was less well faceted, and showed no photoluminescence.