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Full-Text Articles in Physics
Simulation Of Charge Transport In Multi-Island Tunneling Devices: Application To Disordered One-Dimensional Systems At Low And High Biases, Madhusudan A. Savaikar, Douglas R. Banyai, Paul Bergstrom, John A. Jaszczak
Simulation Of Charge Transport In Multi-Island Tunneling Devices: Application To Disordered One-Dimensional Systems At Low And High Biases, Madhusudan A. Savaikar, Douglas R. Banyai, Paul Bergstrom, John A. Jaszczak
John Jaszczak
Although devices have been fabricated displaying interesting single-electron transport characteristics, there has been limited progress in the development of tools that can simulate such devices based on their physical geometry over a range of bias conditions up to a few volts per junction. In this work, we present the development of a multi-island transport simulator, MITS, a simulator of tunneling transport in multi-island devices that takes into account geometrical and material parameters, and can span low and high source-drain biases. First, the capabilities of MITS are demonstrated by modeling experimentaldevices described in the literature, and showing that the simulated device …
Roughening And Preroughening Of Diamond-Cubic {111} Surfaces, Donald L. Woodraska, John A. Jaszczak
Roughening And Preroughening Of Diamond-Cubic {111} Surfaces, Donald L. Woodraska, John A. Jaszczak
John Jaszczak
A solid-on-solid model for {111} surfaces of diamond-cubic materials that correctly takes into account the diamond-cubic crystal structure has been developed for Monte Carlo simulation. In addition to a roughening transition at temperature TR, a distinct preroughening transition at TPR≈0.43TR is indicated by divergences in the surface specific heat and order-parameter susceptibility. Preroughening appears to arise naturally in our nearest-neighbor bond model from the entropic freedom available in the nontrivial crystal structure. Preroughening is shown to dramatically lower the nucleation barrier for growth and etching at low driving forces.
Mechanism For Spatial Organization In Quantum Dot Self-Assembly, Da Gao, Adam Kaczynski, John A. Jaszczak
Mechanism For Spatial Organization In Quantum Dot Self-Assembly, Da Gao, Adam Kaczynski, John A. Jaszczak
John Jaszczak
Inspired by experimental observations of spatially ordered growth hillocks on the (001) surfaces of natural graphite crystals, a mechanism for spatial organization in quantum dotself-assembly is proposed. The regular arrangement of steps from a screw dislocation-generated growth spiral provides the overall template for such ordering. An ordered array of quantum dots may be formed or nucleated from impurities driven to the step corners by diffusion and by their interactions with the spiral’s steps and kinks. Kinetic Monte Carlo simulation of a solid-on-solid model supports the feasibility of such a mechanism.