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Role Of Fluoride Doping In Low-Temperature Combustion-Synthesized Zroxdielectric Films, Aritra Sil, Elise A. Goldfine, Wei Huang, Michael J. Bedzyk, Julia E. Medvedeva, Antonio Facchetti

Physics Faculty Research & Creative Works

Zirconium oxide (ZrOx) is an attractive metal oxide dielectric material for low-voltage, optically transparent, and mechanically flexible electronic applications due to the high dielectric constant (κ ∼14-30), negligible visible light absorption, and, as a thin film, good mechanical flexibility. In this contribution, we explore the effect of fluoride doping on structure-property-function relationships in low-temperature solution-processed amorphous ZrOx. Fluoride-doped zirconium oxide (F:ZrOx) films with a fluoride content between 1.7 and 3.2 in atomic (at) % were synthesized by a combustion synthesis procedure. Irrespective of the fluoride content, grazing incidence X-ray diffraction, atomic-force microscopy, and UV-vis spectroscopy data indicate that all F:ZrOx …