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Defect Structure Of Sb2−Xcrxte3 Single Crystals, Jeffrey Dyck, J. HoráK, P. C. Quayle, Č. DrašAr, P. LošT’ÁK, C. Uher

Physics

Single crystals of Sb₂Te₃ doped with Cr (c_Cr=0–6×10²⁰ cm^-3) were prepared by the Bridgman method. The measurements of the Hall coefficient reveal a nonmonotonous dependence of hole concentrations on the Cr content in the crystal. The hole concentration decreases at low content of Cr, while at higher content of Cr it increases again. However, according to magnetic measurements, Cr atoms enter the structure and form uncharged substitutional defects Cr_Sb^×, which cannot affect the free carrier concentration directly. The observed dependence can be elucidated by means of a point defect …