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Full-Text Articles in Physics
Effect Of Fabrication Parameters On The Ferroelectricity Of Hafnium Zirconium Oxide Films: A Statistical Study, Guillermo A. Salcedo, Ahmad E. Islam, Elizabeth Reichley, Michael Dietz, Christine M. Schubert Kabban, Kevin D. Leedy, Tyson C. Back, Weison Wang, Andrew Green, Timothy S. Wolfe, James M. Sattler
Effect Of Fabrication Parameters On The Ferroelectricity Of Hafnium Zirconium Oxide Films: A Statistical Study, Guillermo A. Salcedo, Ahmad E. Islam, Elizabeth Reichley, Michael Dietz, Christine M. Schubert Kabban, Kevin D. Leedy, Tyson C. Back, Weison Wang, Andrew Green, Timothy S. Wolfe, James M. Sattler
Faculty Publications
Ferroelectricity in hafnium zirconium oxide (Hf1−xZrxO2) and the factors that impact it have been a popular research topic since its discovery in 2011. Although the general trends are known, the interactions between fabrication parameters and their effect on the ferroelectricity of Hf1−xZrxO2 require further investigation. In this paper, we present a statistical study and a model that relates Zr concentration (x), film thickness (tf), and annealing temperature (Ta) with the remanent polarization (Pr) in tungsten (W)-capped Hf1−xZrxO2. …
Electron Traps In Ag-Doped Li2B4O7 Crystals: The Role Of Ag Interstitial Ions, Timothy D. Gustafson, Brant E. Kananen, Nancy C. Giles, Brian C. Holloway, Volodymyr T. Adamiv, Ihor M. Teslyuk, Yaroslav V. Burak, Larry E. Halliburton
Electron Traps In Ag-Doped Li2B4O7 Crystals: The Role Of Ag Interstitial Ions, Timothy D. Gustafson, Brant E. Kananen, Nancy C. Giles, Brian C. Holloway, Volodymyr T. Adamiv, Ihor M. Teslyuk, Yaroslav V. Burak, Larry E. Halliburton
Faculty Publications
Electron paramagnetic resonance (EPR) is used to establish models for electron traps in Ag-doped lithium tetraborate (Li2B4O7) crystals. When exposed at room temperature to ionizing radiation, electrons are trapped at interstitial Ag+ ions and holes are trapped at Ag+ ions on Li+ sites. The trapped electrons occupy a 5s1 orbital on the interstitial Ag ions (some of the unpaired spin density is also on neighboring ions). Three EPR spectra are assigned to electrons trapped at interstitial Ag ions. Their g values are near 1.99 and they have resolved hyperfine structure …
Radiation-Induced Electron And Hole Traps In Ge1-XSnX (X = 0-0.094), Michael R. Hogsed, Kevin Choe, Norman Miguel, Buguo Wang, John Kouvetakis
Radiation-Induced Electron And Hole Traps In Ge1-XSnX (X = 0-0.094), Michael R. Hogsed, Kevin Choe, Norman Miguel, Buguo Wang, John Kouvetakis
Faculty Publications
The band structure of germanium changes significantly when alloyed with a few percent concentrations of tin, and while much work has been done to characterize and exploit these changes, the corresponding deep-level defect characteristics are largely unknown. In this paper, we investigate the dominant deep-level defects created by 2 MeV proton irradiation in Ge1 -xSnx (x = 0.0, 0.020, 0.053, 0.069, and 0.094) diodes and determine how the ionization energies of these defects change with tin concentrations. Deep-level transient spectroscopy measurements approximate the ionization energies associated with electron transitions to/from the valence band (hole traps) and conduction band (electron traps) …
Compositional Stability Of Fept Nanoparticles On Sio2/Si During Annealing, Richard R. Vanfleet, B. Yao, R. V. Petrova, K. R. Coffey
Compositional Stability Of Fept Nanoparticles On Sio2/Si During Annealing, Richard R. Vanfleet, B. Yao, R. V. Petrova, K. R. Coffey
Faculty Publications
The loss of Fe due to oxidation or diffusion into the substrate can prevent the successful preparation of well-ordered, stoichiometric, FePt nanoparticles. In this work we report the composition changes during annealing observed for small (<10 nm) FePt nanoparticles on thermally grown SiO2 layers on Si wafer substrates. Additionally, we describe the use of a controlled reducing gas mixture, Ar+H2+H2O, to reduce the loss of Fe.
Low‐Cost Technique For Preparing N‐Sb2S3/P‐Si Heterojunction Solar Cells, O. Savadogo, K. C. Mandal
Low‐Cost Technique For Preparing N‐Sb2S3/P‐Si Heterojunction Solar Cells, O. Savadogo, K. C. Mandal
Faculty Publications
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