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Effect Of Hole Doping On The Electronic Structure Of Tl2201, S. Sahrakorpi, Hsin Lin, R. Markiewicz, A. Bansil

Arun Bansil

We discuss doping dependencies of the electronic structure and Fermi surface of the monolayer Tl$_{2-x}$Cu$_x$Ba$_2$CuO$_{6+\delta}$ (Tl2201). The TlO bands are found to be particularly sensitive to doping in that these bands rapidly move to higher energies as holes are added into the system. Such doping effects beyond the rigid band picture should be taken into account in analyzing and modeling the electronic spectra of the cuprates.